International Business Machines Corporation

Robert T Sayah

Mark Alan Lavin

Ulrich Alfons Finkler

Lars W Liebmann

James A Culp

Robert J Allen

Thomas Ludwig

Gregory Allen Northrop

Stephen Larry Runyon

Young O Kim

Stephen E Fischer

Steven Eugene Washburn

William F Pokorny

Joseph Roland Verock

A method of gridded glyph geometric objects (L3GO) integrated circuit (IC) design, wherein at least one inter-level connect in a L3GO circuit design is represented as a point matrix glyph (PMG) on a L3GO grid. Each PMG connects a pair of conductors on the next adjacent (above and below) layer and includes an array (one or two dimensional) of point glyphs contained within a cage. The point glyphs may have uniform size and may be on minimum pitch. Each PMG may also include a flange on the above and below layer. A default flange insures adequate coverage of cut shapes represented by the point glyphs.

Gridded glyph geometric objects (L3GO) design method

A set of optical rule checker (ORC) markers are identified in a simulated lithographic pattern generated for a set of data preparation parameters and lithographic processing conditions. Each ORC marker identifies a feature in the simulated lithographic pattern that violates rules of the ORC. A centerline is defined in each ORC marker, and a minimum dimension region is generated around each centerline with a minimum width that complies with the rules of the ORC. A failure region is defined around each ORC marker by removing regions that overlap with the ORC marker from the minimum dimension region. The areas of all failure regions are added to define a figure of demerit, which characterizes the simulated lithographic pattern. The figure of demerit can be evaluated for multiple simulated lithographic patterns or iteratively decreased by modifying the set of data preparation parameters and lithographic processing conditions.

Method and system for comparing lithographic processing conditions and or data preparation processes

A system and method for processing glyph-based data associated with generating very large scale integrated circuit (VLSI) designs. A system is provide that includes a serialization system for converting an input region of glyph design data into a pseudo-string; and a pattern searching system that identifies matching patterns in the glyph design data by analyzing pseudo-strings generated by the serialization system. Pattern searching may include, e.g., predefined pattern searching and redundant pattern searching.

Pseudo-string based pattern recognition in L3GO designs

A system and method for processing glyph-based data associated with generating very large scale integrated circuit (VLSI) designs. A system is provide that includes a system for defining variable patterns using a pattern description language to create a glyph layout; and a graph-based pattern matching system that can identify potential matches amongst variable patterns in the glyph layout.

Graph-based pattern matching in L3GO designs

A method for hierarchical very large scale integration design comprises representing a structure of the hierarchical very large scale integrated design as a graph comprising design objects. The method further comprises specifying a transformation behavior applied to the design objects, and processing, top-down, the graph to perform the transformation on the hierarchical very large scale integrated design.

Framework for hierarchical VLSI design

A method of predicting overlay failure of circuit configurations on adjacent, lithographically produced layers of a semiconductor wafer comprises providing design configurations for circuit portions to be lithographically produced on one or more adjacent layers of a semiconductor wafer, and then predicting shape and alignment for each circuit portions on each adjacent layer using one or more predetermined values for process fluctuation or misalignment error. The method then determines dimension of overlap of the predicted shape and alignment of the circuit portions, and compares the determined dimension of overlap to a theoretical minimum to determine whether the predicted dimension of overlap fails. Using different process fluctuation values and misalignment error values, the steps are then iteratively repeated on the provided design configurations to determine whether the predicted dimension of overlap fails, and a report is made of the measure of failures.

Method for performing monte-carlo simulations to predict overlay failures in integrated circuit designs

An EQUATE property is introduced into the layout cell data for a layout design to identify the schematic to which the layout design corresponds. Rather than exploding the layout cell up to the next level for flat checking because the equivalent schematic is not known, the layout cell instances may then be checked hierarchically, with one instance checked internally for compliance with design rules and the like while the remaining instances are merely checked for proper connection to neighboring cells. New layout cell designs may therefore be created as the need arises during layout without requiring schematic checking tools to be rerun.

Invention to allow multiple layouts for a schematic in hierarchical logical-to-physical checking on chips

The method for selecting hierarchical interaction in a hierarchical shapes processor increases the operator's access and control over the handling of the design's hierarchical structure. The shapes of each cell are considered in accordance with a specified hierarchical relationship having constraints defined by the chosen mode of shape processing. The hierarchical relationships provide additional shape processing modes depending on the operator's physical design requirements.

Method for selecting hierarchical interactions in a hierarchical shapes processor

A method is provided that automatically generates compensated semiconductor devices based on existing VLSI CAD database circuit designs. The preferred method forms a plurality of edge projection shapes which are intersected with active area shapes to form gate edge shapes. The gate edge shapes and residual of the edge shapes are the sorted according to their relative position. These shapes are then selectively biased according to their relative position, and then are used to compensate the existing gate conductor shapes. Thus, this method provides a way to generate gate structures with compensated gate lengths for n-channel and p-channel devices based on existing gate, diffusion and implant designs. This system has the advantage of generating designs with detailed attention to the placement and minimization of jogs that negatively impact the lithography performance.

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Verbank, NY, United States of America

Robert T Sayah