Micron Technology Incorporated

Micron Display Technology, Inc.

Robert T Rasmussen

Surjit S Chadha

David A Cathey

Charles Martin Watkins

Darryl M Stansbury

James J Hofman

Jim R Baugh

J Brett Rolfson

James J Hofmann

Craig M Carpenter

James Baugh

Azeddine Zerrade

Steve McDonald

A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

Methods for forming and cleaning photolithography reticles

A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20-30 nanometers or more.

Method for adjusting dimensions of photomask features

A method of forming integrated circuit structures, such as capacitors and conductive plugs, within contact openings formed in a photosensitive silicone ladder polymer (PVSQ) is disclosed. Contact openings with reduced striations and CD loss are formed in a photosensitive silicone ladder polymer (PVSQ) layer by patterning the PVSQ film employing a photomask with a predefined pattern, exposing the PVSQ film to i-line, developing the exposed PVSQ film in a mixture of anisole/xylene in a ratio of about 1:2 for about 30 seconds, and subsequently optionally annealing the undeveloped PVSQ film at a temperature of about 300&#xb0; C. to about 600&#xb0; C.

System including integrated circuit structures formed in a silicone ladder polymer layer

A method for adjusting one or more dimensions of a photomask subsequent to etching of a defective pattern in the chrome-containing layer thereof is provided. The method includes subjecting the chrome-containing layer of a photomask to a wet etch process utilizing a solution comprising deionized water and ozone. The length of exposure is directly proportional to the degree of adjustment desired. That is, if a small adjustment in one or more dimensions of a photomask is desired, the photomask may be exposed to the deionized water and ozone solution for only a few moments, whereas if a much larger adjustment is necessary, the photomask may be exposed to the solution for several hours. Accordingly, the method of the present invention provides a way in which dimensions of a photomask may be adjusted by a small amount (e.g., a few angstroms) or more severely adjusted, for example, by 20&#x2013;30 nanometers or more.

A flat panel field emission device includes a black matrix formed from an electrically insulative material such as praseodymium-manganese oxide. The insulative black matrix increases image contrast and reduces power consumption. For field emission devices which utilize a switched anode for selectively activating pixels, the insulative material reduces or eliminates problems associated with short circuiting of the pixels.

Black matrix for flat panel field emission displays

Method of forming integrated circuit structures in silicone ladder polymer

The invention includes field emitters, field emission displays (FEDs), monitors, computer systems and methods employing the same for providing uniform electron beams from cathodes of FED devices. The apparatuses each include electron beam uniformity circuitry. The electron beam uniformity circuit provides a grid voltage, V, with a DC offset voltage sufficient to induce field emission from a cathode and a periodic signal superimposed on the DC offset voltage for varying the grid voltage at a frequency fast enough to be undetectable by the human eye. The cathodes may be of the micro-tipped or flat variety. The periodic signal may be sinusoidal with peak-to-peak voltage of between about 5 volts and about 50 volts.

Method and apparatuses for providing uniform electron beams from field emission displays

An anode screen for a field-emission-display is formed by layering light-permeable conductive material and phosphor respectively over a transparent substrate. A plurality of holes are formed in the layer of phosphor to expose corresponding regions of the conductive material. In a further embodiment, the anode screen is disposed in spaced and opposing relationship to a cathode emitter plate that comprises a plurality of electron emitters. Pixel regions of the phosphor of the anode screen correspond to regions of the phosphor opposite respective electron emitters of the plurality of electron emitters. Preferably, each pixel region of the phosphor has a number of holes spaced equally about its periphery. In the preferred embodiment, six holes delimit a hexagon shape for their respective pixel region, wherein centers of the holes provide apexes of the hexagon.

Anode screen for a phosphor display and method of making the same

Apparatuses for providing uniform electron beams from field emission displays

A faceplate in a flat panel display has attachment sites made with a method that includes steps of mixing frit and photoresist to form a mixture, applying the mixture to the substrate, softbaking the substrate and mixture, and exposing and developing the resist to define adhesion sites. Spacers are then attached to the faceplate at the adhesion sites.

Attaching spacers in a display device on desired locations of a conductive layer

The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.

Silicon dioxide etch process which protects metals

A method for coating flat substrates with a liquid, the method comprising: pressurizing liquid within a coat head wherein the liquid has a viscosity of at least thirty centipoises; forming a meniscus of liquid at an orifice in the coat head; contacting the meniscus of the liquid to the substrate; and moving the meniscus relative to the substrate. A system for coating a flat substrate with liquid, the system comprising: a coat head filled with liquid by capillary action, wherein the viscosity of the liquid is at least thirty centipoises; a pressurizer of the liquid that forms a meniscus at an orifice in the coat head; a contacter of the meniscus to the substrate; and a mover of the meniscus relative to the substrate. A system for coating a flat substrate with liquid, the system comprising: a coat head filled with liquid, wherein the viscosity of the liquid is at least thirty centipoises; a pressurizer of the liquid that forms a meniscus at an orifice of the coat head; a contacter of the meniscus to the substrate; a mover of the meniscus relative to the substrate; a regulator of liquid pressure at the base of the coat head; and a replenisher of liquid that replenishes liquid taken from the coat head with liquid in a reservoir.

Method and apparatus for applying highly viscous liquid to substrate

A black matrix material for increasing resolution and contrast of field emission displays is disclosed. The black matrix material is preferably deposited by electrophoresis in the interstitial regions between phosphor pixels of the faceplate. By this technique, high resolution and/or small surface area field emission displays may be manufactured. The black matrix material does not brown when subjected to the conditions associated with the manufacture of field emission displays, is chemically inert and remains stable under vacuum conditions and electron bombardment. The black matrix material is selected from boron carbide, silicon carbide, tungsten carbide, vanadium carbide and mixtures thereof.

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Boise, ID, United States of America

Robert T Rasmussen