Fsi International, Inc.

Other

Massachusetts Institute of Technology

Nve Corporation

Nonvolatile Electronics, Incorporated

Bh Electronics, Inc.

Sensonix, Inc.

Robert T Fayfield

Brent D Schwab

Jeffery W Butterbaugh

David C Gray

John M Heitzinger

Fred C Hiatt

James M Daughton

Kevin L Siefering

Herbert H Sawin

Andrew Scott Lawing

Jane P Chang

Dexin Wang

Richard L Rassel

Charles Dolezalek

John E DeCramer

Zhenghong Qian

Theodore M Hermann

Lawrence E Carter

John F Stokes

John M Heitxinger

An ultra-miniature magnetic device generally comprises a conductive winding and a magnetic core. The conductive winding includes an upper conductor and a lower conductor. The magnetic core is of an elongate rectangular or oval shape having two elongate sections and two short sections. The lower conductor is preferably positioned below the elongate sections of the magnetic core while the upper conductor is preferably positioned above the elongate sections of the magnetic core. The lower and upper conductors are electrically connected by conducting via structures that are formed in sequential steps using semiconductor processing technology. The result is a coil winding around the elongate sections, with the short sections being preferably free of windings. The process provides an advantage of avoiding shorting between the via structures and the magnetic core caused by overetching when etching the via holes.

Method of manufacturing an ultra-miniature magnetic device

Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of this substrate so that the gas, after it has chemically reacted with the substrate surface, flows outward from where it has reacted, off the substrate toward the periphery of the chamber and out a peripheral or central underside exhaust outlet. Gas feed may be provided to one or both sides the substrate and light activation of the substrate or conditioning gas may be provided on one or both sides.

Apparatus for surface conditioning

A magnetic sensor system and a method for installing magnetic sensors for detecting metal objects that allows ease of manipulation, control and access. A carrier conduit is used to position a magnetic sensor in an outer conduit. The outer conduit may be disposed beneath a surface where objects to be detected may be positioned. Alternatively, a conduit having multiple channels may be placed in a pathway. Magnetic sensors may be placed in the channels and a top placed over the conduit. Multiple embodiments for orienting the magnetic sensor systems are provided.

Magnetic sensor system and method for installing magnetic sensors

A ferromagnetic thin-film based magnetoresistive device with a first ferromagnetic material based film having electrically conductive, ferromagnetic material nanogranules embedded in an intergranular material of a smaller electrical conductivity first nonmagnetic. The device may have an intermediate layer adjacent the first ferromagnetic material based film and a second film is on the other side of the intermediate layer of a substantially ferromagnetic material. The first film is less than 1.0 &mgr;m thick.

Magnetic devices using nanocomposite materials

The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Equipment for UV wafer heating and photochemistry

Apparatus and method for direct delivery of enabling chemical gas from a liquid source and of HF gas in a hydrogen fluoride/enabling chemical based cleaning or etching process, such as a silicon dioxide film etching process. The liquid enabling chemical is temperature controlled to generate a vapor pressure which is sufficient to operate a mass flow controller at a desired processing pressure without a carrier gas. Prior to entering the process chamber, the enabling chemical gas is pre-mixed with HF and optionally, a carrier gas, all of which are supplied at flow rates independent of each other. By controlling the vapor pressure of the solvent in this way, solvent/HF/carrier mixtures which are not physically possible with carrier gas systems are attainable allowing access to a larger process space.

Direct vapor delivery of enabling chemical for enhanced HF etch process performance

A current determiner having an output at which representations of input currents are provided comprising an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction at an angle to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a nonmagnetic layer with one of these two ferromagnetic thin-film layers having a magnetization that is substantially maintained in a selected direction despite the magnetic fields arising from the input currents causing reversals of direction of magnetization of that remaining one of these two ferromagnetic thin-film layers. This first current sensor is spaced apart from the input conductor at least in part by a polymeric electrical insulating material, and the input conductor can be provided on a mechanically stiff base supported on such material and provided with an electric field interrupter supporting such material between the first current sensor and the input conductor. The sensor can be electrically connected to a electronic circuitry formed in the substrate as a monolithic integrated circuit sharing a common reference, and two such monolithic integrated chips in a housing can provide duplex information signal transmission.

Magnetic digital signal coupler having selected/reversal directions of magnetization

Apparatus for processing both sides of a microelectronic device precursor

A method for treating a microelectronics substrate to produce a surface with improved characteristics for subsequent processing. The substrate is treated with HF, IPA, and an inert gas in a narrow range of conditions to remove unwanted oxide layers. The resulting surface is useful for processes like epitaxial deposition which benefit from a clean silicon surface with a low oxygen content.

HF/IPA based process for removing undesired oxides form a substrate

A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.

UV/halogen metals removal process

A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.

Cleaning method

Direct vapor delivery of enabling chemical for enhanced HF etch process

Method and apparatus for surface conditioning

Growing community of inventors

St. Louis Park, MN, United States of America

Robert T Fayfield