Crystal Is, Inc.

Robert T Bondokov

Leo J Schowalter

Kenneth E Morgan

Glen Alfred Slack

Shailaja P Rao

Jianfeng Chen

Shichao Wang

Keisuke Yamaoka

James R Grandusky

Thomas Miebach

Joseph A Smart

Shawn Robert Gibb

Takashi Suzuki

Toru Kimura

Sandra B Schujman

Juan Carlos Rojo

Sean P Branagan

Shiwen Liu

Timothy J Bettles

Justin A Mark

J Carlos Rojo

Kasey Hogan

Naoki Ishigami

Glen A Stack

In various embodiments, polycrystalline AlN ceramics, single-crystalline AlN boules, and/or single-crystalline AlN substrates are infused with tungsten present on the surface and/or within the bulk thereof. The tungsten-infused AlN materials may be utilized to fabricate electronic and/or optoelectronic (e.g., light-emitting) devices thereon.

Tungsten-infused aluminum nitride crystals and methods of forming them

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers. The single-crystal aluminum nitride boules may advantageously have diameters that increase along at least portions of their lengths.

Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths

In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride single crystals may have large boule masses and volumes.

Aluminum nitride single crystals having large crystal augmentation parameters

In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth and have large crystal augmentation parameters. The aluminum nitride single crystals advantageously have low densities of basal plane dislocations and large substrate versatility metrics.

Control of basal plane dislocations in large aluminum nitride crystals

In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.

Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

Thermal control for formation and processing of aluminum nitride

In various embodiments, single-crystal aluminum nitride boules and substrates are highly visibly transparent and have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Aluminum nitride single crystals having controllable color and methods of forming them

In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Large, UV-transparent aluminum nitride single crystals

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

Two-stage seeded growth of large aluminum nitride single crystals

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities&#x2014;e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm.

Large aluminum nitride crystals with reduced defects and methods of making them

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density &#x2264;100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density&#x2264;100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

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Watervliet, NY, United States of America

Robert T Bondokov