Lumiense Photonics Inc.

Hanvision Co., Ltd.

Hyphy USA Inc.

Other

Intracoastal System Engineering Corporation

Robert Steven Hannebauer

Todd E Rockoff

Roger G Dower

Sean C Carroll

Xu Tan

Dale C Penner

The subject of this disclosure is applying improved techniques to media signal communication as well as control and status exchange to implement a diversity of media interfaces, achieving suitable media communication results despite EM propagation challenges.

Transporting sampled analog signals over multiple electromagnetic pathways

The present invention relates generally to video or other media transmission, and more particularly, to encoding and decoding of video media that has been transmitted between a video source and a video sink using spread spectrum direct sequence (SSDS) modulation.

Decoder circuits for the transmission of video media using spread spectrum direct sequence modulation

A method of interconnecting metallic structures in the manufacture of a three-dimensional semiconductor is provided, the method comprising providing a first upper surface of a first substrate and a second upper surface of a second substrate with a bonding layer; bonding the first upper surface to the second upper surface to provide a bond; etching a via through a lower surface of the first substrate, through the first substrate, around a first metallic structure embedded in the first substrate, through the bond and to a second metallic structure embedded in the second substrate; and filling the via with a conductive material to provide a via structure, thereby electrically connecting the metallic structures.

Method of manufacturing of advanced three-dimensional semiconductor structures and structures produced therefrom

Digital or analog samples are sent from a video source to a video storage subsystem that encodes the samples into analog levels, stores the analog levels for a period of time, decodes the analog levels back into digital samples and then sends the digital samples to a video sink for display, N samples are encoded into L analog levels for storage. The storage subsystem may be located at the video source, at the video sink, or anywhere in between the two. The storage subsystem may be located on an electromagnetic pathway over which the L encoded analog levels are transmitted from a video source as an analog signal. The L encoded analog levels are written to storage and then later read from storage and retransmitted over the electromagnetic pathway toward a video sink. The storage subsystem may also be integrated with a transmitter that encodes the samples into analog levels for storage or may be integrated with a receiver that stores the analog levels and then decodes the analog levels back into samples. A sentinel track in the storage array detects attenuation or offset which is then compensated for.

Sampled analog storage system

Transporting sampled signals over multiple electromagnetic pathways

Encoder and decoder circuits for the transmission of video media using spread spectrum direct sequence modulation

The subject of this disclosure is applying SSDS-CDMA techniques to media signal communication as well as control and status exchange to implement a diversity of media interfaces, achieving suitable media communication results despite EM propagation challenges.

The bolometric sensing circuit includes a pixel array comprising pixels, each pixel comprising a sensor configuration to comprise a light receiving portion to convert incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; an output portion to output a common mode voltage that represents a voltage of the sensing portion from which accumulated heat has been removed in response to a heat removing voltage to thermally reset the sensing portion, and output a sensed voltage that represents a voltage of the sensing portion which has accumulated heat for an integration period after being thermally reset; and a processor to subtract the common mode voltage from the sensed voltage to produce a signal voltage that represents a change in resistance of the sensing portion due to the heat accumulated for the integration period.

Semiconductor for sensing infrared radiation and method thereof

A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.

Thermo-electric semiconductor device and method for manufacturing the same

A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure. The method may further comprises: after the forming of the light-absorbing layer for converting the energy of the incident photons into the heat, forming on the light-absorbing layer a filling layer to fill up the cavity, and after the forming of the additional light-absorbing layer, selectively removing the filling layer and exposing the sensing structure part in a manner to float it over the cavity.

Semiconductor device and method of manufacturing the same

A micro-bolometer type infrared (IR) sensing device is provided. The IR sensing device includes an absorbed heat discharging part and a sensing structure part formed as bean structure, spaced apart from the absorbed heat discharging part, supported at least at one end on the absorbed heat discharging part, and discharging heat absorbed in the sensing structure part by being elastically deformed and thus touching the absorbed heat discharging part. The sensing structure part includes a sensing part with variation in secondary attribute according to heat and a light-absorbing part formed into one unit with the sensing part in a manner to surround the sensing part as seen in section view, and converting energy of incident photons into heat. The sensing structure part discharges heat absorbed therein by being elastically deformed and thus touching the absorbed heat discharge part spaced apart downward from the sensing structure part.

A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion. In another embodiment, the sensing configuration includes a heat removing portion which is disposed to form an empty space between the heat removing portion and the light receiving portion and the sensing portion, and removes accumulated heat from the light receiving portion and the sensing portion, and the sensing circuit includes an actuating voltage supplying portion which applies electric potential between the sensing portion and the heat removing portion to make the light receiving portion and the sensing portion elastically deflect into the empty space and consequently contact the heat removing portion to remove the heat.

The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Image sensor photodiodes using a multi-layer substrate and contact method and structure thereof

Fabrication of a three-dimensional semiconductor structure is provided by the present disclosure. A buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer, which is turned over and is then bonded to a handle wafer. Silicon of the donor wafer is then removed. In the same manner, blue, green, and red diode layers, and a transistor layer are sequentially formed. A metal layer is formed on the transistor layer. Inter-elements contact and pixel separation processes are performed and a support layer is bonded. The whole device is turned over and the nitride film is etched using an etch-stop layer, thus removing the handle wafer. After the elements are separated, packaging is performed to complete the device. Therefore, a back illuminated image sensor of a multi-layer structure can be provided.

Method of fabricating silicon/dielectric multi-layer semiconductor structures using layer transfer technology and also a three-dimensional multi-layer semiconductor device and stacked layer type image sensor using the same method, and a method of manufacturing a three-dimensional multi-layer semiconductor device and the stack type image sensor

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Vancouver, Canada

Robert Steven Hannebauer