Ameritherm, Inc.

Robert Sengillo, Jr

Daniel J Lincoln

Gary C Adishian

John Cunliffe

Bhima Rao Vijayendran

Jonathan M Gorbold

Manfred Luttinger

William J Ryan

Steve Skewes

Lewis Hamilton

A susceptor composition that can bond two or more layers or substrates to one another and that can be used to coat or cut a substrate. The susceptor composition is activated in the presence of radio frequency (RF) energy. In one embodiment, the susceptor composition of the present invention comprises a susceptor and a carrier. The carrier and susceptor are blended with one another and form a mixture, preferably a uniform mixture. The susceptor is present in an amount effective to allow the susceptor composition to be heated by RF energy. In a preferred embodiment, the susceptor also functions as an adhesive. The susceptor is an ionic or polar compound and acts as either a charge-carrying or an oscillating/vibrating component of the susceptor composition. The susceptor generates thermal energy in the presence of an RF electromagnetic or electrical field (hereafter RF field).

RF active compositions for use in adhesion, bonding and coating

A power amplifier that provides wide-band, high efficiency, high voltage, HF power amplification over a large dynamic operating range. In one embodiment, the power amplifier includes a driver amplifier, an intermediate power amplifier comprising a coherently combined array of two transistors, and a final power amplifier comprising a coherently combined array of multiple transistors. The two stage driver amplifier drives the intermediate power amplifier, which drives the final power amplifier. Preferably, because of the inherent linearity, dynamic range, and power limiting requirements, the driver amplifier includes two transistor devices that are of the silicon power bipolar type, operating in class A with classic common-emitter circuit configuration. Preferably, the transistors used in the intermediate power amplifier and the final power amplifier are MOSFETS operating in a non-classic DC grounded-drain, RF common source circuit configuration.

High frequency power amplifier

Growing community of inventors

Rochester, NY, United States of America

Robert Sengillo, Jr