Q-cells Se

Technische Universitaet Berlin

Hanwha Q Cells Gmbh

Robert Seguin

Peter Engelhart

Wilhelmus Mathijs Marie Kessels

Gijs Dingemans

Dieter Bimberg

Maximilian Scherff

Vladimir Gaysler

Markus Träger

Sven Rodt

Max Köntopp

Andrey Stekolnikov

Matthias Heimann

Til Bartel

Anatol Lochmann

A solar cell includes a semiconductor wafer, at least one dielectric layer arranged on the semiconductor wafer, a metal layer arranged on the dielectric layer, and a contact structure arranged in the dielectric layer such that the contact structure provides an electrical connection between the metal layer and the semiconductor wafer. The contact structure has at least one first structure having a minimum dimension and at least one second structure having a maximum dimension, wherein the minimum dimension and the maximum dimension are defined along a surface of the semiconductor wafer and the minimum dimension of the first structure is greater than the maximum dimension of the second structure.

Solar cell and method for producing same

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

Semiconductor device, in particular solar cell

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.

Single-photon source and method for the production and operation thereof

Growing community of inventors

Berlin, Germany

Robert Seguin