Applied Materials, Inc.

Robert Scott Clark

Kelly A McDonough

Jennifer Y Sun

John Patrick Holland

Alexander Miller Paterson

Senh Thach

Li Xu

Xiaoping Zhou

Subhash Deshmukh

Sharma V Pamarthy

Jim Zhongyi He

Jivko Dinev

Dennis Koosau

Farid Abooameri

Jeffrey William Dietz

Huutri Dao

David E Gutierrez

Declan Scanlan

Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

Apparatus for etching high aspect ratio features

Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using a bonding material having metal filler disposed in an adhesive layer. Other embodiments include methods for manufacturing a semiconductor processing chamber component having a bonding material that includes metal filled disposed in an adhesive layer. The metal filler is suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on the exposed portion of the bonding material upon exposure to the plasma.

Self-passivating plasma resistant material for joining chamber components

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San Jose, CA, United States of America

Robert Scott Clark