Harris Corporation

General Electric Company

Robert S Wrathall

John M Neilson

Mike F Chang

Hamza Yilmaz

Frederick P Jones

Robert G Hodgins

Joseph A Yedinak

Jeffrey G Mansmann

Claire E Jackoski

Provided are electrical circuits and methods for power factor correction. An example method includes receiving, by converter, an input voltage at a fundamental frequency and generating an output voltage; generating, based on the output voltage, a first measurement signal; subtracting a first reference signal from the first measurement signal to obtain a first error signal; generating an adaptive current sense signal, generating a reference voltage based on the input voltage, subtracting the reference voltage from the current sense signal thus generating a second measurement signal to control the current measurement; subtracting the second measurement signal from the input voltage to obtain a difference signal, wherein the difference signal is largely minimized by removing overtones of the fundamental frequency; generating, based on the difference signal, a second error signal; using a sum of the second error signal as a first order correction to the first error signal to regulate the converter.

Systems and methods of unwanted harmonic content removal for power conversion

A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode.

Power VDMOSFET with schottky on lightly doped drain of lateral driver FET

A current sensing circuit includes a first reference resistor connected in series with the source-drain path of a current mirroring transistor across the source-drain path of a power transistor which is N times the size of the current mirroring transistor. Due to the first reference resistor, the current in the mirroring transistor is less than l/N the current in the power transistor. To sense the current in the power transistor more accurately, the current sensing circuitry includes a reference circuit in which the source-drain path of a compensating transistor, of like size as the current mirroring transistor, is connected in parallel with a second reference resistor to produce a reference current which is approximately equal to l/N the current flowing in the power transistor.

Compensated current sensing circuit

A process for fabricating a power IC structure which includes the following masking steps:

Growing community of inventors

Durham, NC, United States of America

Robert S Wrathall