Dpix, LLC

Robert Rodriquez

Shawn Michael O'Rourke

Paul G Carey

Byung-Kyu Park

Ick-Hwan Ko

Michael Robert Johnson

Sanjeev Tandon

An image sensor includes a substrate, a thin film transistor on the substrate, a dielectric layer over the thin film transistor, a stacked metal layer on and extending through the dielectric layer to the thin film transistor, a bulk heterojunction layer directly coupled to the stacked metal layer, either a hole transport layer directly coupled to the bulk heterojunction layer, and a top contact layer directly coupled to the hole transport layer, or a top contact layer directly coupled to the bulk heterojunction layer. The bulk heterojunction layer includes an electron donor/acceptor material, the hole transport layer includes a transparent conductive polymer material, and the top contact layer includes a transparent conductive material. The image sensor includes a moisture barrier layer directly coupled to the top contact layer, including an optically clear adhesive and a laminated transparent barrier film.

Method of manufacturing an enhanced high performance image sensor device

A method of forming an organic semiconductor includes forming a thin film transistor ('TFT') backplane; forming a pixel well over the TFT backplane using a photoresist; performing a first plasma etch of the pixel well; stripping the photoresist in the pixel well; performing a second plasma etch of the pixel well; performing a first wash of the pixel well; exposing the pixel well to ultraviolet light; performing a second wash of the pixel well; and forming an organic photodiode in the pixel well.

Method of optimizing an interface for processing of an organic semiconductor

A method of manufacturing an image sensor device includes providing a metalized thin film transistor layer on a glass substrate; forming an inter-layer dielectric layer on the metalized thin film transistor layer; forming a via through the inter-layer dielectric layer; forming a metal layer the inter-layer dielectric and within the inter-layer dielectric layer via for contacting the metalized thin film transistor layer; forming a bank layer on the metal layer and the inter-layer dielectric layer; forming a via through the bank layer; forming an electron transport layer on the bank layer and within the bank layer via for contacting an upper surface of the metal layer; forming a bulk heterojunction layer on the electron transport layer; forming a hole transport layer on the bulk heterojunction layer; and forming a top contact layer on the hole transport layer.

Method of manufacturing an image sensor device

A flat panel image sensor includes a thin film transistor (TFT) and diode array, a conformal insulating layer on a top surface of the TFT and diode array, a planarized dielectric layer on a top surface of the conformal insulating layer, a first metalized via in the planarized dielectric layer and the conformal insulating layer to contact a metalized portion of the TFT and diode array, a second metalized via in the planarized dielectric layer and the conformal insulation layer to contact a diode portion of the TFT and diode array, and a passivation layer over the first and second vias and an upper surface of the planarized dielectric layer.

Growing community of inventors

Colorado Springs, CO, United States of America

Robert Rodriquez