US Government As Represented by the Secretary of the Army

Robert Reams

Judith T McCullen

Timothy J Mermagen

Bohdan J Dobriansky

Jonathan Terrell

A module and a method of making the module is disclosed. The module is fod from a semiconductor and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes.

Bonding of silicon carbide chip with a semiconductor

A module and a method of making the module is disclosed. The module is formed from a semiconductor substrate and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes.

Bonding of silicon carbide directly to a semiconductor substrate by

An RF-insensitive semiconductor slapper ignitor is created using a silicon ubstrate having a first metallized portion centrally located on its bottom face to form a Schottky barrier diode thereon, and a second substantially smaller metallized portion centrally located on its top face to form a consumable plug. A flyer disc is disposed atop the second metallized portion and is propelled when the consumable plug vaporizes in response to the high current density associated with ignition. In various embodiments the flyer disc is either an insulating material such as plastic, or polyimide, or formed integral to a top contact metal layer.

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Silver Spring, MD, United States of America

Robert Reams