Robert Boschgmbh

Volkswagen Ag

Infineon Technologies Ag

Robert Plikat

Wolfgang Feiler

Dieter Silber

Jörg Möckel

Rainer Petersen

Jochen Kuehner

Armin Sue

Holger Kapels

Peter Flohrs

Klaus Rechberger

Stephan Ernst

Ingolf Gröning

Stephan Rees

Kuno Wolf

Wolfgang Wondrak

Stefan Mueller

Armin Ruf

Henning Strauss

Eike Hermann Timm

Henning Woehl-Bruhn

Jochen Ruopp

Hermann Wetzel

Wolfgang Weigel

Kay-Horst Dempewolf

Henning Strauβ

Tobias BÖHM

Felix Madauss

Christoph Kaufhold

An electric machine includes a rotor having a magnetic field generating device for generating a magnetic flux. A flux changing apparatus of the electric machine includes an axially displaceable body that is disposed axially outside the magnetic field generating device for changing a magnetic flux within a gap between the rotor and a stator in dependence upon an axial position of the body relative to the rotor. The flux changing apparatus includes an adjusting device for axially adjusting the axial position of the body relative to the rotor. The adjusting device includes an actuator and an adjusting element. The actuator acts on the body via the adjusting element. The adjusting element engages the body and/or the actuator in such a manner that a rotational movement of the body can be decoupled from the adjusting element, a housing of the electric machine, the rotor and/or the actuator.

Electrical machine including a magnetic flux weakening apparatus

An electric drive includes a motor assembly, an output assembly, a transmission stage and one or more power electronics units connected to one or more electric voltage sources in order to control electrical sub-phases of electric machines of the motor assembly. The electric machines have motor shafts disposed parallel to one another. The transmission stage is connected to the motor assembly and also connected to the output assembly. The transmission stage has a transmission sun connected to the output assembly and has a plurality of transmission planets each connected to a respective one of the electric machines. The transmission planets are each fixed on a respective one of the motor shafts and are disposed in an annular manner around the transmission sun and roll on the transmission sun in a torque-transmitting manner. A method for operating an electric drive and a serial hybrid drive train are also provided.

Electric drive, method for the operation thereof, and serial hybrid drive train for a motor vehicle

An electric drive includes a motor configuration with a plurality of electric machines, an output configuration, and a transmission stage. The output configuration has a summing stage configured as a Ravigneaux set with a summing internal gear, a summing spider, two sets of summing planets, and two summing suns. The transmission stage has a transmission sun, transmission planets, and a rotatably mounted transmission internal gear. The transmission sun is connected to the output configuration. The transmission planets are each connected to a respective one of the electric machines. The transmission planets roll on the transmission sun and on the transmission internal gear in a torque-transmitting manner. The transmission internal gear is fixedly connected to one of the two summing suns. The transmission sun is fixedly connected to another one of the two summing suns. A drive configuration for a motor vehicle is also provided.

Electric drive and drive configuration for a motor vehicle

A control circuit for controlling an electronic circuit, which has a current path through a semiconductor switch and a line; when the semiconductor switch is switched, the inductance of the line and/or of a component in the current path producing an excess voltage between a first and a second current-carrying terminal of the semiconductor switch; the control circuit having a controllable current source for charging or discharging a charge-controlled gate of the semiconductor switch with the aid of a control current, as well as a control unit; the control unit controlling the current source in such a manner, that in the case of a switching operation, the terminal voltage across the current-carrying terminals of the semiconductor switch does not exceed a predefined setpoint terminal voltage.

Control circuit for controlling an electronic circuit and method for this

A semiconductor power component having an anode contact on the reverse side, an emitter region of a first conductor type on the reverse side, which is connected to the anode contact on the reverse side, a drift zone which is connected to the emitter region that is on the reverse side and extends partially to the front surface, an MOS control structure on the front side, having a control contact positioned in insulated fashion, a cathode contact on a front side which is connected to a source region and a first body region. The drift zone has first and second drift region of a second conductor type and a third drift region of first conductor type. First drift region is a buried region, second drift region connects the front surface to first drift region, and third drift region connects the first and/or second body region to first drift region. The degree of compensation (K(y)) that is ascertainable from the second and third drift region is greater than one and has a maximum in the region of the side of the third drift region facing away from the front surface.

Metal insulator power semiconductor component (MIS) and a method for producing the same

A method for packaging electronic assemblies and a multiple chip package, at least one power semiconductor chip being applied to a base plate using a first solder, at least one logic chip being applied to the base plate, the logic chip and the base plate being positioned electrically insulated from one another, at least one logic chip being connected to the at least one power semiconductor chip using signal transmission lines, and the electronic assembly including the at least one power semiconductor chip and the at least one logic chip being packaged using a molding compound in order to provide a multiple chip package.

Method for packaging electronic modules and multiple chip packaging

A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 &#x3bc;m.

Semiconductor power component and a method of producing same

An inverter for an electric machine is specified that includes a plurality of switching elements, in particular six, which are positioned in a bridge circuit and produce a connection between the electric machine and a battery. The switching elements built into the low-side branch of the inverter are ones that are conductive without a control voltage present, i.e., normally-on switching elements. That ensures that if the supply voltage is absent and the electric machine is rotating the windings of the electric machine are short circuited and no overvoltages are able to occur. In normal operation the inverter is operated like a conventional inverter, by clocked actuation, but with reversed actuation of the control electrodes, i.e., with control voltage for non-conductive time phases and without control voltage in conductive phases.

Inverter for an electric machine

The invention concerns a monolithically integrated semiconductor component, having a first charge carrier region of a first charge carrier doping; at least two second charge carrier regions with opposite charge carrier doping, patterned within the first charge carrier region at a spacing from one another, and third charge carrier regions, with the first charge carrier doping, patterned within the second charge carrier regions, a PN transition being short-circuited between the second charge carrier regions and the third charge carrier regions via a contacting area (source connection), the first charge carrier region being equipped with a contact (drain connection), and the second charge carrier regions being invertable by means of a contacting area in the region between the first charge carrier region and the third charge carrier region; and having at least one Schottky diode connected in parallel with the charge carrier region and the charge carrier region. Provision is made for the first charge carrier region to have a further contacting area, this contacting area being additionally doped near the surface, depending on the doping concentration of the first region, with a further near-surface charge carrier region of higher concentration, so that an ohmic contact is created and is connected to the anode connection of the at least one Schottky diode.

Monolithcally integrated semiconductor component

A bidirectional semiconductor component having two symmetrical MOS transistor structures integrated laterally in a substrate and connected antiserially, their drain terminals being connected to one another. A zone having the same type of conductivity as the drain region yet a higher doping than that of the drain region is situated upstream from a pn junction of one of the MOS transistors in a junction area with the drain region.

Bi-directional semiconductor component

A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

Semiconductor component and method of producing it

A semiconductor power component is described having a rear-side anode contact, a rear-side emitter region of a first conductivity type, which is connected to the rear-side anode contact, a drift region, which is connected to the rear-side emitter region and partially extends to the front-side surface, a front-side MOS control structure, and a front-side cathode contact, which is connected to the source region and the body region. The drift region includes a first drift region of the second conductivity type, a second drift region of the second conductivity type, and a third drift region of the first conductivity type. The first drift region is a buried region. The second drift region connects the front-side surface to the first drift region. The third drift region borders on a body region and connects the front side surface to the first drift region. The degree of compensation to be determined from the second and third drift region is greater than one and has a maximum in the area of the side of the third drift region that is facing away from the front-side surface. The present invention also creates a corresponding manufacturing method.

Semiconductor power component and a corresponding manufacturing method

DMOS transistor protected against polarity reversal

The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

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Ummern, Germany

Robert Plikat