Motorola Corporation

Freescale Semiconductor,inc.

Nxp Usa, Inc.

Robert Paul Davidson

Xiaowei Ren

Lakshminarayan Viswanathan

David Cobb Burdeaux

Michele Lynn Miera

Pierre-Marie J Piel

Mark A DeTar

Garry D Funk

Richard A Rose

Daniel D Moline

Embodiments of laterally diffused metal oxide semiconductor (LDMOS) transistors are provided. An LDMOS transistor includes a substrate having a source region, channel region, and a drain region. A first implant is formed to a first depth in the substrate. A gate electrode is formed over the channel region in the substrate between the source region and the drain region. A second implant is formed in the source region of the substrate; the second implant is laterally diffused under the gate electrode a predetermined distance. A third implant is formed to a second depth in the drain region of the substrate; the second depth is less than the first depth.

Laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers

A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and having a first conductivity type, a gate structure supported by the semiconductor substrate between the source and drain regions, a first well region in the semiconductor substrate, having a second conductivity type, and in which a channel region is formed under the gate structure during operation, and a second well region adjacent the first well region, having the second conductivity type, and having a higher dopant concentration than the first well region, to establish a path to carry charge carriers of the second conductivity type away from a parasitic bipolar transistor involving a junction between the channel region and the source region.

LDMOS minority carrier shunting

A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and having a first conductivity type, a gate structure supported by the semiconductor substrate between the source and drain regions, a well region in the semiconductor substrate, having a second conductivity type, and in which a channel region is formed under the gate structure during operation, and a shunt region adjacent the well region in the semiconductor substrate and having the second conductivity type. The shunt region has a higher dopant concentration than the well region to establish a shunt path for charge carriers of the second conductivity type that electrically couples the well region to a potential of the source region.

LDMOS device with minority carrier shunt region

A lateral diffused metal oxide semiconductor (LDMOS) transistor is provided. The LDMOS transistor includes a substrate having a source region, channel region, and a drain region. A first implant is formed to a first depth in the substrate. A gate electrode is formed over the channel region in the substrate between the source region and the drain region. A second implant is formed in the source region of the substrate; the second implant is laterally diffused under the gate electrode a predetermined distance. A third implant is formed to a second depth in the drain region of the substrate; the second depth is less than the first depth. A method for forming the LDMOS transistor is also provided.

Methods of forming laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers

A wire bond-less electronic component is for use with a circuit external to the wire bond-less electronic component. The wire bond-less electronic component includes a support substrate (), an electronic device () over the support substrate, and a cover () located over the electronic device and the support substrate. The cover includes an interconnect structure () electrically coupled to the electronic device and adapted to electrically couple together the electronic device and the circuit for providing impedance transformation of an electrical signal between the electronic device and the circuit.

Method of manufacturing a wire bond-less electronic component for use with an external circuit

A wire bond-less electronic component is for use with a circuit external to the wire bond-less electronic component. The wire bond-less electronic component includes a support substrate ( ), an electronic device ( ) over the support substrate, and a cover ( ) located over the electronic device and the support substrate. The cover includes an interconnect structure ( ) electrically coupled to the electronic device and adapted to electrically couple together the electronic device and the circuit for providing impedance transformation of an electrical signal between the electronic device and the circuit.

Wire bond-less electronic component for use with an external circuit and method of manufacture

A technique for achieving impedance transformations utilizing transmission lines has been provided. This technique involves placing additional distributed capacitance along the length of a transmission line thereby reducing the effective characteristic impedance of the transmission line. The effective wavelength for the transmission line is also reduced thereby substantially reducing the electrical length of a quarter wavelength matching network and making the transmission line practical and effective even at low frequencies.

Distributed capacitance transmission line

An active load impedance control system for a radio frequency power amplifier comprising an amplification means for amplifying radio frequency signals and providing a forward signal, a control means responsive to the operating conditions of said amplification means, a correction signal means responsive to the control means for providing an amplitude, a sampling means and phase controlled corrective reflective signal and a combining means for combining said forward signal and said corrective reflective signal.

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Chandler, AZ, United States of America

Robert Paul Davidson