International Business Machines Corporation

Robert P Westerfield, Jr

Robert E Tompkins

Joseph S Logan

Michael S Barnes

Raymond R Ruckel

John H Keller

David Clifford Long

David C Linnell

John Ulrich Knickerbocker

Thomas Weiss

Mark J LaPlante

Robert P Kuder, Ii

Robert Albert Meyen

Thomas Gerard Jantz

Cyprian Emeka Uzoh

Panayotis Constantinou Andricacos

Paul F Bodenweber

James G Balz

Yuet-Ying Yu

John Owen Dukovic

Jason Scott Miller

Leonard J Gardecki

Ferdinand D DiMaria

Dennis Albert Covert

Brian J Stark

David M Waligunda

William Wayne Witmer

A self-aligning socket for an integrated circuit package includes an outer frame and an array of contacts configured for alignment with corresponding conductive pads on the bottom of the integrated circuit package. The outer frame further includes a first plurality of alignment ball bearings configured thereon, the ball bearings mounted on cantilevered spring rods.

Apparatus for implementing a self-centering land grid array socket

A gang punch tool assembly and method is provided for punching holes in a plurality of greensheets which are processed sequentially through the assembly. The punch mechanism is a gang punch cooperating with a corresponding die and the greensheet is automatically fed to the gang punch and die, the greensheet punched and then the punched greensheet removed from the punch area and another greensheet positioned for punching. Operation of the gang punch apparatus is efficient and effective and has a high greensheet throughput. A preferred gang punch uses a pressurizable air chamber for controlling punching of the greensheet without damage to the greensheets or gang punch mechanism.

Gang punch tool assembly

An anode assembly including a perforated anode. A perforated anode holder holds the anode. The anode holder includes perforations at least in a bottom wall such that plating solution may flow through perforations in the anode holder and perforations in the anode. An anode isolator separates the anode and a cathode. The anode isolator includes at least one curvilinear surface.

Anode design for semiconductor deposition

A gang-punch pin apparatus for punching selected hole patterns in thin sheet materials such as greensheets is provided. The gang-punch pin apparatus uses program plates in the punch apparatus which plates are positioned intermediate the non-punching end of the punch pins and a clearance plate wherein punch pins not used for punching a particular layer of the MLC are retracted into during punching. At the other punch pin locations, the punch pins, upon activation of the punch apparatus by compressing an expandable chamber, usually by application of a force on the punch apparatus, are extended through the lower portion of the punch apparatus to form vias in a greensheet. A die apparatus is also provided for use with the punch assembly to form the vias and to remove the punched material (slugs) from the die apparatus. The gang punch-pin may be shorter than conventional pins and be made at a low cost because of the thin sheet metal plates preferably used to make the component parts of the punch and die apparatus.

Low-cost high-density gang punch

An apparatus for loading, chamfering and unloading a ceramic or ceramic/polymer substrate for electronic components. An automatic part loader moves substrates in a row as a unit, using a frangible pin to push the parts. The part loader separates the first of the substrates from the rest, and a load pedestal pushes the first substrate up into a loading/unloading nest. The load pedestal is mounted on rods so that the substrate may move laterally to center itself in the nest. The nest then rotates to load the substrate onto a movable process pedestal. The chamfering apparatus includes a pair of spaced, rotatable cutting spindles for chamfering edges and corners on the substrate. The cutting spindles include: i) separate top and bottom edge cutters for simultaneously chamfering top and bottom of edges of a substrate secured on the carrier as the substrate passes between the spindles and ii) corner cutters for simultaneously chamfering corners of a substrate secured on the carrier as the substrate contacts the spindles. The pedestal rotates the substrate about an axis normal to the plane of the substrate and moves the substrate in a direction normal to the plane of the substrate to present unchamfered edges and corners to the cutting spindles. A disc brake on the process pedestal may be actuated to prevent rotation of the substrate during chamfering. An enclosure surrounds the substrate, chamfering cutters and process pedestal during chamfering and utilizes the air flow supplied by the rotating cutters to propel chips into a particle collector.

Automated chamfering method

Automated chamfering apparatus and method

An apparatus for removing surface irregularities from a flat workpiece includes one or more abrading assemblies through which the workpiece passes sequentially. Each abrading assembly has a lower contact assembly and an upper contact assembly. The upper contact assembly is precisely spaced above the lower contact assembly in opposing parallel relation to the lower assembly. The lower and upper contact assemblies reciprocate in opposing directions to provide abrading action to the workpiece.

Apparatus for removing surface irregularities from a flat workpiece

An electrostatic chuck is disclosed that is resistant to the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck. A guard ring surrounds the chuck and floats close to the self-bias potential induced by the plasma on the wafer. The voltage between the wafer and the closest electrode is thereby capacitively divided by the guard ring.

Guard ring electrostatic chuck

An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing. An alternate embodiment further suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

Electrostatic chuck with reference electrode

An electrostatic chuck is made by a method in which the component parts are machined, then anodized to provide a hard insulating surface, and then assembled in a fixture, to provide a planar surface for wafer support that retains superior insulating properties; gas may be fed from the rim only, diffusing within interstices between the clamping surface and the wafer and maintaining a desired pressure by flowing radially through an impedance determined by the average spacing between clamping surface and wafer, thereby providing uniform pressure across the clamping surface without the use of elastomeric seals.

Method of making electrostatic chuck with oxide insulator

An aluminum electrostatic chuck for holding semiconductor wafers during wafer processing. The chuck is characterized by a closely determined magnitude of electrostatic holding force due to an anodization step for creating a finely uniform thickness of dielectric material on the chuck surface facing the wafer which, in turn, determines the holding force. The chuck cross section comprises two different thickness areas with fluid cooling being applied to the thinner thickness area during chuck anodization to assure thickness uniformity of the anodized material across the face of the chuck.

Electrostatic chuck having relatively thick and thin areas and means for

An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing, further suppressing the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

An electrostatic chuck suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a guard ring that floats close to the self-bias potential induced by the plasma on the wafer, thereby capacitively dividing the voltage between the wafer and the closest electrode.

Growing community of inventors

Montgomery, NY, United States of America

Robert P Westerfield, Jr