Ncc Nano, LLC

Organicid, Inc.

Robert P Wenz

Kurt Anthony Schroder

Siddharth Mohapatra

A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.

Method for providing lateral thermal processing of thin films on low-temperature substrates

A low-cost and efficient process producing improved organic electronic devices such as transistors that may be used in a variety of applications is described. The applications may include radio frequency identification (RFID) devices, displays and the like. In one embodiment, the improved process is implemented by flash annealing a substrate with an energy having wavelengths ranging from about 250 nm to about 1100 nm or higher. In this flash annealing process energy having wavelengths from about 250 nm to about 350 nm or higher is substantially prevented from irradiating the substrate.

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Austin, TX, United States of America

Robert P Wenz