International Rectifier Corporation

Robert P Haase

David Paul Jones

A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The conduction channel formed by the SiGe layer is permanently strained to increase its mobility particularly hole mobility.

Trench type MOSgated device with strained layer on trench sidewall

An integrated circuit that includes at least one vertical conduction DMOS device and other semiconductor devices.

Vertical DMOS device in integrated circuit

Trench type mosgated device with strained layer on trench sidewall

A process for fabricating power semiconductor devices involving preparation of a silicon wafer by epitaxial formation of an intrinsic silicon layer on a silicon substrate and high energy implantation to form channel and drift regions in the intrinsic epitaxial silicon.

Growing community of inventors

Newport, United Kingdom

Robert P Haase