Lucent Technologies Inc.

At&t Bell Laboratories

At+t Corp.

American Telephone & Telegraph Co., At&t Bell Laboratories

Robert P Frankenthal

Dennis L Krause

James D Sinclair

Ajibola O Ibidunni

Greg E Blonder

David W Johnson, Jr

Eliezer M Rabinovich

Mary E Fiorino

Robert B vanDover

David J Siconolfi

A method of protecting metals from corrosion by applying an alternating voltage to them, thereby reversing the metal's polarity with respect to its surroundings. Particular applications are for metals which are buried in soil or are exposed to an electrolyte. Amphoteric metals Steels, which are subject to hydrogen embrittlement when made cathodic, are also protected by polarity reversal.

Corrosion protection employing alternating voltage

The disclosed method of making a glass body by a sol/gel process comprises electrochemically assisted release of the gel body from the mold in which the body was formed. More specifically, the method involves gelation of a sol in a mold that comprises a first conductor member, with a second conductor member also being in contact with the sol and/or gel, and causing the flow of a current between the first and second conductor members, with the first member being the cathode. In consequence of the current flow a substantially liquid lubricating layer that facilitates removal of the gel body from the melt exists at the cathode/gel interface.

Method of making a sol-gel glass body and removing same from mold

This invention is embodied in an apparatus for assessing the effects of controlled amounts of well-characterized ionic or other particles on the reliability of electronic components. The chamber includes a high efficiency filter that purifies the input air and a recirculating system which ensures substantially laminar, constant velocity air flow, controllable humidity, and steady state conditions throughout at least a portion of the chamber. Particles are introduced into the chamber from a particle generator through a series of output ports that ensure a uniform concentration of particles throughout at least a portion of the chamber. Substantially constant conditions are achieved by constantly introducing new particles into the chamber, withdrawing a continuous flow of particle-laden air from the chamber, removing essentially all the particles from the particle-laden air withdrawn from the chamber and introducing a continuous flow of filtered air into the chamber. Additionally provisions for monitoring particle concentrations and size distribution, for controlling the relative humidity in the chamber, and for carrying out electrical aging and testing can be incorporated.

Dust particle exposure chamber

A new metallization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti--TiPd--Cu--Ni--Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous HF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent HF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and lift-off (rejection etching) of Pd layer in a prior art Ti--Pd--Cu--Ni--Au metallization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization. The metallization is suitable for use in various circuits including integrated circuits (ICs), hybrid integrated circuits (HICs), film integrated circuits (FICs), multi-chip modules (MCMs), etc.

Copper-based metallizations for hybrid integrated circuits

A new metanization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti - TiPd - Cu - Ni - Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous BF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent BF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and liftoff (rejection etching) of Pd layer in a prior art Ti-Pd-Cu-Ni-Au metanization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization. The metallization is suitable for use in various circuits including integrated circuits (ICs), hybrid integrated circuits (HICs), film integrated circuits (FICs), multi-chip modules (MCMs), etc.

Certain magnetic alloys are useful for a variety of applications including for magneto-optic memory storage media (optical disks). These magnetic alloys are difficult to protect against composition alteration through such processes as corrosion, oxidation, diffusion, etc. The invention is a multiple-layer structure which protects the magnetic alloys against diffusion as well as corrosion and oxidation without affecting performance of the magnetic alloy in the optical disk. Such magnetic memory storage devices exhibit high bit density and long life. They are erasable and inexpensive and highly advantageous for use in high-bit memory storage devices.

Growing community of inventors

Summit, NJ, United States of America

Robert P Frankenthal