Sgs-thomson Microelectronics Limited

Optical Switch Corporation

Other

Stmicroelectronics Gmbh

Thomson Components-mostek Corporation

Rockwell International Corporation

Robert O Miller

Girish A Dixit

Fusen E Chen

Gregory C Smith

Fu-Tai Liou

Yu-Pin Han

Chiara Zaccherini

Mohammed M Farohani

Che C Wei

Kenneth C Noddings

Chris Karaguleff

David C Jurbergs

Peter J Morgan

Daniel J Mockler

Jeffrey A Reed

Dale A Simpson

A method for reconfiguring an optical switch includes selecting a first path through a photonic crystal. The crystal includes the first path having a plurality of first regions and a second path having a plurality of second regions. The crystal also includes a third path that provides an optical signal for propagation through one of the first and second paths. The method also includes heating at least one of the first regions and at least one of the second regions. The method further includes cooling the first region at a first rate to place the first region in a first state. The first state allows propagation of the optical signal through at least a portion of the crystal. In addition, the method includes cooling the second region at a second rate to place the second region in a second state. The second state reduces the propagation of the optical signal through at least a portion of the crystal.

Reconfigurable optical switch and method

An apparatus ( ) includes an optical switch ( ) and a control circuit ( ). The optical switch includes a member ( ) which supports optical fibers ( ). A sliding piece ( ) is movably supported on the member and also supports optical fibers ( ). Movement of the sliding piece is effected by two magnetic field generators ( ) respectively supported by the member and sliding piece, the direction of movement being controlled by varying the direction of a current flow to one of the generators, while maintaining an unchanging current flow to the other. Each generator includes a plurality of ferromagnetic poles ( ), and a serpentine electrical conductor ( ). In one operational position of the sliding piece, optical radiation follows a first optical path ( ) through one pair of the fibers. In a different operational position, optical radiation follows a different optical path ( ) through a different pair of the fibers ( ).

Method and apparatus for optical switching

An optical switch ( ) includes an aligning member ( ) with an aperture ( ) extending between opposite sides to define an aligning groove ( ). A first output waveguide ( ) is in the aligning groove. An input waveguide ( ) and a second output waveguide ( ) are in a further groove ( ) in the aligning member. The second output waveguide can move between two positions where optical signals from the input waveguide are respectively directed into the first and second output waveguides. In a variation, an aligning member ( ) includes a plurality of the optical switches arranged to form a 1&times;N switching fabric ( ). Further, two such switching fabrics ( ) can be coupled to define an M&times;N switching fabric ( ).

System and method for orienting and positioning optical fibers

An optical fiber includes an endface having a first reflective surface and a second reflective surface. The first reflective surface is formed at a first bias angle with respect to a plane that is normal to the longitudinal axis of the optical fiber. The first reflective surface totally internally reflects an optical signal at a first reflection angle with respect to the longitudinal axis. The second reflective surface is coupled to the first reflective surface and formed at a second bias angle with respect to the plane such that the second reflective surface totally internally reflects the optical signal at a selected second reflection angle.

Optical fiber having first and second reflective surfaces and method of operation

An optical switch includes an input member, a reflective output member coupled to the input member, and a transmissive output member. The input member supports a plurality of input waveguides, each input waveguide having a reflective surface and operable to receive a corresponding optical signal. The reflective output member supports a plurality of first output waveguides, each first output waveguide coupled to a corresponding input waveguide. The transmissive output member supports a plurality of second output waveguides and has a first position spaced apart from the input member such that the reflective surface of each input waveguide totally internally reflects a corresponding optical signal to a corresponding one of the first output waveguides, and a second position in proximal contact with the input member such that each second output waveguide frustrates the total internal reflection of a corresponding input waveguide and receives a corresponding optical signal.

Integrated fiber array optical switch and method of operation

A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.

Method of forming a landing pad structure in an integrated circuit

Method of forming a landing pad sturcture in an integrated circuit

An electrical connection structure is provided for protecting a barrier metal layer within a contact opening during the formation of an aluminum interconnection layer overlying a tungsten plugged connection structure. The deposited tungsten plug overlying the barrier metal layer is etched back sufficiently to create a slight recess at the opening. A thin layer of tungsten is then selectively deposited for filling the recess. This layer acts as an etch stop during aluminum interconnection layer formation and protects the underlying barrier metal layer.

Semiconductor contact structure in integrated semiconductor devices

A method is provided for patterning a submicron semiconductor layer of an integrated circuit, and an integrated circuit formed according to the same. A conductive structure is formed on the integrated circuit. A dielectric layer is formed over the integrated circuit. A contact opening is formed in the dielectric layer exposing a portion of the underlying first conductive structure. A barrier layer is formed on the dielectric layer and in the contact opening. A substantially conformal layer is formed over the barrier layer and in the contact opening. The conformal layer is partially etched away wherein the conformal layer remains only in a bottom portion of the contact opening. A second conductive layer is formed over the barrier layer and the remaining conformal layer.

Method of forming submicron contacts

A method is provided for patterning a submicron semiconductor layer of an integrated circuit, and an integrated circuit formed according to the same. A first conductive structure is formed over the integrated circuit. A dielectric is formed over the first conductive structure having a contact opening exposing a portion of the underlying first conductive layer. A barrier layer is formed in the bottom of the contact opening. A second, substantially conformal conductive layer is formed by chemical vapor deposition over the dielectric layer; along the sidewalls and in the bottom of the contact opening. A third conductive layer is then formed over the second conductive layer wherein the third conductive layer does not fill the contact opening. The second and third conductive layers are etched to form an interconnect substantially over the contact opening.

Planar contact with a void

Method of forming a planar contact with a void

A method is provided for forming isoplanar isolated regions in an integrated circuit, and an integrated circuit formed according to the same. According to a first disclosed embodiment, a first epitaxial layer is formed over a substrate, the substrate having a (100) crystal orientation. A first masking layer is formed over the first epitaxial layer. The first masking layer is patterned and the first epitaxial layer is etched to form openings. The sidewalls of these openings have a (111) crystal orientation. The first masking layer is then removed and a second masking layer is formed in the openings. The first epitaxial layer is anodized and oxidized. The second masking layer is removed and a second epitaxial layer is formed in the openings. According to an alternate embodiment, after the first epitaxial layer is anodized, the second epitaxial layer is formed in the openings and the first epitaxial layer is then oxidized.

Isoplanar isolated active regions

Integrated circuit device structure with dielectric and metal stacked

A polycrystalline silicon layer is deposited and patterned to define a level of interconnect. Contact opening to lower conductive layers are then defined and patterned. A refractory metal such as tungsten is selectively deposited over the device, so that it adheres to the polycrystalline silicon in the interconnect leads and silicon of the lower conductive layer which is exposed in the contact openings. This provides a low resistance interconnect, and good, metal, contacts to underlying layers. Shared contacts between two or more polycrystalline silicon interconnect layers and in underlying conductive layers such as a substrate are easily formed using this technique.

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The Colony, TX, United States of America

Robert O Miller