Arizona State University

University of California

Massachusetts Institute of Technology

Robert Nemanich

Franz A Koeck

Srabanti Chowdhury

Michael W Geis

Stephen Goodnick

Franz A M Koeck

Joseph Varghese

Anna Zaniewski

Jason M Holmes

Maitreya Dutta

Manpuneet Benipal

Ricardo O Alarcon

Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.

Contact structures for n-type diamond

According to some embodiments, a method for stabilizing electrical properties of a diamond semiconductor comprises terminating a surface of a diamond with hydrogen (H) or deuterium (D) atoms and over-coating the surface of the diamond with an encapsulating material comprising metal oxide salt doped with one or more elements capable of generating negative charge in the metal oxide salt.

Doped encapsulation material for diamond semiconductors

Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.

Current generation from radiation with diamond diode-based devices for detection or power generation

Apparatuses and methods are provided for manufacturing diamond electronic devices. The apparatus includes a base comprising a water-block and a cover that at least partially covers the water-block. The apparatus includes a sample stage disposed on the base. The apparatus further includes a sample holder disposed on the sample stage and configured to accept a diamond substrate. The apparatus includes controlled thermal interfaces between water-block, sample stage, sample holder and diamond substrate.

Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures

A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.

Diamond based current aperture vertical transistor and methods of making and using the same

Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.

Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation

An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.

Growing community of inventors

Scottsdale, AZ, United States of America

Robert Nemanich