Eastman-kodak Company

Omnivision Technologies, Inc.

Semiconductor Components Industries, LLC

Intellectual Ventures Fund 83 LLC

Truesense Imaging, Inc.

Sri International

Motorola Corporation

International Business Machines Corporation

Robert Michael Guidash

Paul P Lee

Tomas Geurts

Manuel H Innocent

John N Border

John J Ellis-Monaghan

Joseph R Summa

Kenneth Alan Parulski

James William Adkisson

Mark David Jaffe

Eric Gordon Stevens

Teh-Hsuang Lee

Hung Q Doan

Antonio S Ciccarelli

Frank Razavi

John Randall Fredlund

Kevin Edward Spaulding

Peter Alan Levine

Cristian A Tivarus

Rui Zhu

Marek W Kowarz

John Thomas Compton

Bruce Harold Pillman

Frederick T Brady

Richard John Rassel

John Paul McCarten

Herbert J Erhardt

Vladimir Korobov

Wayne E Prentice

John Robertson Tower

Muhammad Maksudur Rahman

Sean C Kelly

Timothy J Kenney

J Kelly Lee

Ram Kannegundla

Clifford I Drowley

Ravi K Mruthyunjaya

Edward T Nelson

James P Lavine

Weize Xu

Charles V Stancampiano

Bartosz Piotr Banachowicz

Lawrence J Bernstein

Todd J Anderson

Mark S Swenson

Daniel Tekleab

R Daniel McGrath

Robert Andosca

Genis Chapinal

John Norvold Border

Transistor structures for a transistor may include a first source-drain region, a second source-drain region, and a channel region between the first and second source-drain regions overlapped by a gate structure. Transistor structures may be formed in a well of a first doping type. Isolation structures having the first doping type may be formed within the well. A lightly doped implant region of a second doping type for each of the source-drain regions may be formed within the well and separated from the isolation structures. A heavily doped surface implant region of the first doping type may extend across the surface of the well and cover the lightly doped implant region of each source-drain region. The surface implant region may be formed by patterning or by a blanket implantation process across the transistor structures.

Transistor structures

An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a coupled-gates structure coupling a photodiode at one input terminal to a capacitor at a first output terminal and to a floating diffusion region at a second output terminal. The coupled-gates structure may include a first transistor that sets a potential barrier defining overflow portions of the photodiode-generated charge. Second and third transistors in the coupled-gates structure may be modulated to transfer the overflow charge to the capacitor and to the floating diffusion region at suitable times. The second and third transistors may form a conductive path between the capacitor and the floating diffusion region for a low conversion gain mode of operation.

Image pixels with coupled-gates structures

An imaging system may include an image sensor having an image sensor. The image sensor may include an image sensor pixel array coupled to row control circuitry and column readout circuitry. The image sensor pixel array may include a plurality of image sensor pixels. Each image sensor pixel may include a photosensitive element configured to generate charge in response to incident light, a first charge storage structure configured to accumulate an overflow portion of the generated charge for a low gain signal and a second charge storage structure configured to store a remaining portion of the generated charge for a high gain signal. Each image sensor pixel may also include a dedicated overflow charge storage structure interposed between the first charge storage structure and a floating diffusion region.

Imaging systems and methods for generating high dynamic range images

An imaging system for capturing light over a wide dynamic range and method for operating the same are provided. In some aspects, the method includes positioning an imaging pixel to image a scene described by light signals that extend over a wide dynamic range, and selecting a different integration time for at least two photodiodes in the imaging pixel based on light signals received by the imaging pixel, wherein the photodiodes are coupled to a sense node, and each photodiode is controlled using a different transfer gate. The method also includes performing a readout of the imaging pixel using a readout circuit connected to the sense node, wherein a capacitance associated with the sense node is modified during the readout of the at least two photodiodes.

Extended dynamic range imaging sensor and operating mode of the same

An image sensor may include a symmetrical imaging pixel with a floating diffusion region. The floating diffusion region may be formed in the center of the imaging pixel. A shallow p-well may be formed around the floating diffusion region. A transfer gate configured to transfer charge from a photodiode to the floating diffusion region may be ring-shaped with an opening that overlaps the floating diffusion region. Isolation regions including deep trench isolation and a p-well may surround the photodiode of the imaging pixel. A p-stripe may couple the shallow p-well around the floating diffusion region to the isolation regions. The floating diffusion regions of neighboring pixels may be coupled together with additional conductive layers to implement shared configurations.

Imaging sensor having floating region of imaging device on one substrate electrically coupled to another floating region formed on a second substrate

An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.

Apparatus and methods for buried channel transfer gate

A digital camera for capturing an image containing the photographer, comprising: an image sensor; an optical system for forming an image of a scene on the image sensor; a processor for processing the output of the image sensor in order to detect the presence of one or more faces in a field of view of the digital camera; a feedback mechanism for providing feedback to the photographer while the photographer is included within the field of view, responsive to detecting at least one face in the field of view, and a means for initiating capture of a digital image of the scene containing the photographer.

Imaging device for capturing self-portrait images

An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.

Image sensor with controllable vertically integrated photodetectors

A motor vehicle system for automatically reporting exception events, comprising: one or more digital cameras, at least one digital camera having a primary function; an image memory system for storing digital images; means for detecting exception events; and a wireless communications system for communicating with a central reporting service. A program memory stores executable instruction for causing a processor to perform the steps of: using at least one of the digital cameras to periodically capture digital images at a specified capture frequency; storing the periodically captured digital images in the image memory for a specified period of time; and receiving input from the means for detecting an exception event. In response to the detection of an exception event a communication link is opened to the central reporting service using the wireless communications system, and one or more of the captured digital images are transmitted to the central reporting service.

Automotive imaging system for recording exception events

Image sensor with controllable vertically integrated photodetectors using a buried layer

Growing community of inventors

Rochester, NY, United States of America

Robert Michael Guidash