Westinghouse Electric Corporation

Northrop Grumman Systems Corporation

Robert Mazelsky

Narsingh Bahadur Singh

James P McHugh

Tom Henningsen

Milton S Gottlieb

Juris A Asars

Zoltan K Kun

David Leksell

Richard H Hopkins

Emmanuel P Supertzi

Richard P Storrick

James D Smith

Maurice G Fey

John F Jackovitz

Francis J Harvey, Ii

Walter E Gaida

David W Coffey

Steven Strauch

William D Partlow

Albert M Stewart

Crystals formed of a solid-solution of Ni(BF.sub.4).sub.2 6H.sub.2 O provide very good materials for filtering ultraviolet light and will not deteriorate in temperatures as high as 110.degree. C. They are particularly useful in sensing devices which seek to identify the presence of ultraviolet light in the UV missile warning band.

Crystals for ultraviolet light filters

Crystals formed of Tl.sub.3 AsS.sub.3 provide very good materials for the nonlinear optical conversion efficiency. The crystals are useful in nonlinear optical devices such as harmonic generators and optical parametric oscillators, and in linear applications such as acousto-optical devices. The method of preparing such crystals is also disclosed.

Thallium arsenic sulfide crystals (t1.sub.3 AsS.sub.3) high efficiency

Crystals formed of a solid-solution of Tl.sub.3 AsSe.sub.3 and Tl.sub.1 AsS.sub.3 provide very good materials for the nonlinear optical conversion efficiency. The crystals are useful in nonlinear optical devices such as harmonic generators and optical parametric oscillators, and in linear applications such as acousto-optical devices. The method of preparing such crystals is also disclosed.

Solid solution crystals of Tl.sub.3 AsSe.sub.3 and Tl.sub.3 AsS.sub.3

Acousto-optical devices utilize crystals of a novel material thallium arsenic sulfide (Tl.sub.3 AsS.sub.3) grown from a melt. A Tl.sub.3 AsS.sub.3 crystal is cut and parallel faces are prepared and polished. A piezoelectric transducer connected to an RF generator is placed on the acoustic face to generate sound waves. The light is directed through the optical face of the crystal and interacts with the acoustic waves. These devices may be used in signal processing, spectrum analyzing, spectroscopic, liquid analyzing and spectral imaging systems.

Acousto-optic devices utilizing thallium arsenic sulfide (T1AsS.sub.3)

A thin film electroluminescent edge emitter structure includes a common electrode layer and control electrodes disposed above the common electrode layer. At least one dielectric layer is disposed between the common electrode layer and control electrodes, and a phosphor layer is interposed between the one dielectric layer and common electrode layer. The common electrode layer, one dielectric layer and the phosphor layer define the light-emitting pixels of the emitter structure. Each pixel has a light-emitting face formed thereon and is operable upon application of electrical excitation to cause the radiation of light energy within its phosphor layer at least in a direction towards the pixel light-emitting face. An optical lens system associated with the pixels includes a preselected contour shaped on the light-emitting face of each pixel to define an optical lens integral therewith to project the light energy passed therethrough in a preselected direction and form a beam of light energy having a preselected beam pattern. A multi-color light emission system employed by the pixels includes a plurality of phosphor zones comprising the phosphor layer and capable of projecting different light energy through the light-emitting faces of the pixels. Also, separate edge emitter structures projecting different colors of light can be utilized in a electrophotographic printer.

Thin film electroluminescent edge emitter structure with optical lens

A crystal of a composition of silver, thallium, and sulfur is useful in non-linear optical devices, acousto-optical devices, piezo electric devices and other types of optical and acoustic devices. The chalcogenide glass composition of the invention displays superior transmission beyond 12 .mu.m.

Chalcogenide glass, associated method and apparatus

A thin film electroluminescent edge emitter structure includes a common electrode layer and control electrodes disposed above the common electrode layer. At least one dielectric layer is disposed between the common electrode layer and control electrodes, and a phosphor layer is interposed between the one dielectric layer and common electrode layer. The common electrode layer, one dielectric layer and the phosphor layer define the light-emitting pixels of the emitter structure. Each pixel has a light-emitting face formed thereon and is operable upon application of electrical excitation to cause the radiation of light energy within its phosphor layer at least in a direction towards the pixel light-emitting face. An optical lens system associated with the pixels includes a preselected contour shaped on the light-emitting face of each pixel to define an optical lens integral therewith to project the light energy passed therethrough in a preselected direction and form a beam of light energy having a preselected beam pattern. A multi-color light emission system employed by the pixels includes a plurality of phosphor zones composing the phosphor layer and capable of projecting different light energy through the light-emitting faces of the pixels. Also, separate edge emitter structures projecting different colors of light can be utilized in a electrophotographic printer.

Disclosed is a crystal 1 of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, cadmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphoride, indium arsenide, or mixtures thereof, doped with a precious metal in an amount of about 25 ppm up to the solubility limit of a precious metal in the crystal. The crystal is useful in nonlinear optical devices, acousto-optical devices, piezoelectric devices, and other types of optical and acoustic devices.

Precious metal doped crystals for hardening of the crystals

A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including liquid silicon and a gaseous salt of the reductant, depositing the liquid silicon on a downwardly inclined surface, and attaching a single seed crystal of silicon to the liquid silicon and withdrawing the single seed crystal from the liquid silicon so as to propagate a large single crystal.

Growing community of inventors

Monroeville, PA, United States of America

Robert Mazelsky