Sdcmaterials, Inc.

Tokyo Electron Limited

Robert Matthew Kevwitch

Maximilian A Biberger

Qinghua Yin

Stephen Edward Lehman, Jr

Jesudos J Kingsley

Dorel Ioan Toma

Jianhong Zhu

Brandon Hansen

A metal catalyst is formed by vaporizing a quantity of metal and a quantity of carrier forming a vapor cloud. The vapor cloud is quenched forming precipitate nanoparticles comprising a portion of metal and a portion of carrier. The nanoparticles are impregnated onto supports. The supports are able to be used in existing heterogeneous catalysis systems. A system for forming metal catalysts comprises means for vaporizing a quantity of metals and a quantity of carrier, quenching the resulting vapor cloud and forming precipitate nanoparticles comprising a portion of metals and a portion of carrier. The system further comprises means for impregnating supports with the nanoparticles.

Method and system for forming plug and play metal catalysts

A metal compound catalyst is formed by vaporizing a quantity of catalyst material and a quantity of carrier thereby forming a vapor cloud, exposing the vapor cloud to a co-reactant and quenching the vapor cloud. The nanoparticles are impregnated onto supports. The supports are able to be used in existing heterogeneous catalysis systems. A system for forming metal compound catalysts comprises means for vaporizing a quantity of catalyst material and a quantity of carrier, quenching the resulting vapor cloud, forming precipitate nanoparticles comprising a portion of catalyst material and a portion of carrier, and subjecting the nanoparticles to a co-reactant. The system further comprises means for impregnating the of supports with the nanoparticles.

Method and system for forming plug and play metal compound catalysts

An oxide catalyst is formed by vaporizing a quantity of at least one precursor material or catalyst material thereby forming a vapor cloud. The vapor cloud is quenched forming precipitate nanoparticles. The nanoparticles are impregnated onto supports. The supports are able to be used in existing heterogeneous catalysis systems. A system for forming oxide catalysts comprises means for vaporizing a quantity of at least one precursor material or at least one catalyst material, quenching the resulting vapor cloud and forming precipitate nanoparticles. The system further comprises means for supports with the nanoparticles.

Method and system for forming plug and play oxide catalysts

A method of making catalysts includes loading a quantity of catalyst material and quantity of carrier in into a plasma gun in a desired ratio and vaporizing the catalyst material and carrier in a reaction chamber, thereby forming a vapor cloud. The vapor cloud is quenched in a quench chamber to form solid nanoparticles, wherein the quench chamber comprises a frusto-conical body having a wide end, a narrow end, and a quench region formed between the wide end and the narrow end, and a reactive mixture inlet configured to receive the vapor cloud and to supply the vapor cloud into the quench region in the direction of the narrow end. The quench chamber further includes at least one conditioning fluid inlet configured to supply a conditioning fluid into the quench region in the direction of the narrow end. The nanoparticles are bonded to supports.

A metal compound catalyst is formed by vaporizing a quantity of catalyst material and a quantity of carrier thereby forming a vapor cloud, exposing the vapor cloud to a co-reactant and quenching the vapor cloud. The nanoparticles are impregnated onto supports. The supports are able to be used in existing heterogeneous catalysis systems. A system for forming metal compound catalysts comprises components for vaporizing a quantity of catalyst material and a quantity of carrier, quenching the resulting vapor cloud, forming precipitate nanoparticles comprising a portion of catalyst material and a portion of carrier, and subjecting the nanoparticles to a co-reactant. The system further comprises components for impregnating the supports with the nanoparticles.

An oxide catalyst is formed by vaporizing a quantity of at least one precursor material or catalyst material thereby forming a vapor cloud. The vapor cloud is quenches forming precipitate nanoparticles. The nanoparticles are impregnated onto supports. The supports are able to be used in existing heterogeneous catalyst systems. A system for forming oxide catalysts comprises components for vaporizing a quantity of at least one precursor material or at least one catalyst material, quenching the resulting vapor cloud and forming precipitate nanoparticles. The system further comprises components for supports with the nanoparticles.

During the processing of substrates, the substrate surface may be subjected to a cleaning process using supercritical CO. Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO. For example, an oxidation cleaning process causes the substrate structure to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical COdue to the polar constituents resulting from oxidation. The method thus further includes processing the substrate with supercritical COand a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical COand are more easily removed than their predecessors.

Treatment of substrate using functionalizing agent in supercritical carbon dioxide

A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

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Chandler, AZ, United States of America

Robert Matthew Kevwitch