University of Virginia Patent Foundation

Robert M Weikle, Ii

Arthur Weston Lichtenberger

Matthew Bauwens

Nathan Swami

Boris Gelmont

Tatiana Globus

Alexei Bykhovski

Naser Alijabbari

Nicolas Scott Barker

Souheil Nadri

Haiyong Xu

Lihan Chen

Ramakrishnan Parthasarathy

Michael E Cyberey

Theodore James Reck

Arthur Weston Linchtenberger

Ramakrishnan Parthasarthy

Linli Xie

A probe chip device and a method for fabricating a probe chip device with an integrated diode sensor are disclosed. In one example, a probe chip device includes a beam head element that includes at least one probe tip that is configured to electrically probe a device under test. The probe chip device further includes a diode sensor that is heterogeneously integrated on the beam head element and is proximally positioned to the at least one probe tip.

System and method for integrating diode sensors on micromachined wafer probes

An integrated frequency quadruplet consists of a pair of balanced frequency doublers that are driven in phase quadrature using a hybrid coupler. This approach results, effectively, in a 'unilateral' multiplier that presents a match to the input-driving source, irrespective of the impedance of the doubler stages. The present invention applies this architecture to implement an integrated frequency quadruplet with output frequency of 160 GHz using quasi vertical GaAs varactors fabricated on thin silicon support membranes. The quadruplet has a balanced circuit architecture that addresses degradation issues often arising from impedance mis-matches between multiplier stages. A unique quasi-vertical diode process is used to implement the quadruplet, resulting in an integrated drop-in chip module that incorporates 18 varactors, matching networks and beamleads for mounting. The chip is tailored to fit a multiplier waveguide housing resulting in high reproducibility and consistency in manufacture and performance.

Balanced unilateral frequency quadrupler

A quasi-vertical Schottky diode architecture includes a topside anode contact that connects to external circuitry through an airbridge finger, a thin mesa of semiconductor material with epilayers including a bottomside highly-doped layer, a bottomside ohmic contact directly below the anode, and a host substrate onto which the diode material is bonded by a thin adhesive layer. A method of fabricating the diode architecture includes preparation of the semiconductor wafer for processing (including initial etching to expose the highly-doped epilayer, deposition of metals and annealing to form the ohmic contact, application of the adhesive layer to the host substrate, thermal compression bonding of diode wafer and host wafer, with ohmic contact side facing host wafer to form a composite wafer, etching and formation of diode mesas to isolate devices on the host substrate, lithography and formation of topside anode contact and external circuitry on host wafer).

Quasi-vertical diode with integrated ohmic contact base and related method thereof

A micromachining process to fabricate a single chip that simple drops into a supporting structure. The micromachining process provides the ability to create a probe that will interface with integrated circuits, for example, operating at frequencies in the range of about 100 GHz to about 3,000 GHz (3 THz). This approach creates a silicon structure (or other applicable choice of material) that provides mechanical force for probing while supporting the transfer of the high frequency energy between a measurement system and the integrated circuit, individual device or material.

Micromachined on-wafer probes and related method

A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.

Method of local electro-magnetic field enhancement of terahertz (THZ) radiation in sub-wavelength regions and improved coupling of radiation to materials through the use of the discontinuity edge effect

Method of local electro-magnetic field enhancement of terahertz (THz) radiation in sub- wavelength regions and improved coupling of radiation to materials through the use of the discontinuity edge effect

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Crozet, VA, United States of America

Robert M Weikle, Ii