Minnesota Mining and Manufacturing Company

Other

Robert M Park

Michael Albert Haase

James M DePuydt

Hwa Cheng

A reversible threaded fastener system which provides holding of a nut in a f ully conjoined state with respect to a bolt, yet the interrelationship therebetween is fully reversible and is accomplished without friction and without inelastic deformation. Included is a bolt having a threaded shank, a nut having a threaded bore for being threadably engaged on the threaded shank of the bolt, and a washer non-rotatably interfaced with the shank and provided with a plurality of radial washer waves. The washer is held in non-rotatable relation with respect to the bolt by the shank and the bore of the washer being mutually asymmetric. In a first preferred embodiment, the inner face of the nut is provided with a plurality of radial nut waves which correspond to the washer waves, and the washer is resiliently deformable. In a second preferred embodiment, the nut is provided with a plurality of radial nut waves which correspond to the washer waves, the washer is not resiliently deformable, and the nut is resiliently deformable. In a third preferred embodiment, the nut is provided with a plurality of radial nut waves which correspond to the washer waves, the washer is not resiliently deformable, the nut is not resiliently deformable, and the head of the bolt is resiliently deformable.

Reversible threaded fastener system

An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (N.sub.D /N.sub.A) of less than or equal to about 0.8. The net acceptor concentration is greater than about 5.times.10.sup.15 cm .sup.-3 and the resistivity is less than 15 .OMEGA.-cm. The p-type ZnSe layer is deposited by doping the ZnSe during fabrication with a neutral free-radical source.

Doping of IIB-VIA semiconductors during molecular beam epitaxy

A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA molecules or atoms in a standard molecular beam epitaxy crystal growth system. These beams react on a substrate producing single crystal films of doped IIB-VIA semiconductors such as ZnSe:N, for example. The improved doping characteristics result from the high reactivity of radicals produced by the free-radical source with the surface of the growing crystal.

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Gainesville, FL, United States of America

Robert M Park