University of Florida Research Foundation, Incorporated

General Imaging Corporation

Robert M Fox

William Richard Eisenstadt

Jang Sup Yoon

John D Cox

Tao Zhang

Jongshick Ahn

Kooho Jung

A self-testing transceiver having an on-chip power detection capability is provided. The self-testing transceiver can include a semiconductor substrate and a transmitter having a high-power amplifier disposed on the substrate. The self-testing transceiver also can include a receiver disposed on the substrate for selectively coupling to an antenna. The self-testing transceiver can further include at least one power detector disposed on the semiconductor substrate for determining a power such as an RMS and/or peak-power of a signal at an internal node of the self-testing transceiver. Additionally, the self-testing transceiver can include a loopback circuit disposed on the substrate.

Power detector of embedded IC test circuits

An embedded s-parameter measurement system for measuring or determining an s-parameter is provided. The system includes an s-parameter test circuit for connecting to a port of a high-frequency multi-port device-under-test (DUT). The s-parameter test circuit includes a directional coupler for sampling a forward signal conveyed to the DUT and for sampling a reverse signal reflected by the DUT. The s-parameter test circuit also includes a peak detector electrically connected to the directional coupler for detecting a magnitude of a signal conveyed to the peak detector by the directional coupler. The s-parameter test circuit further includes a phase detector electrically connected to the directional coupler for determining a phase of a signal conveyed to the phase detector by the directional coupler, and at least one other s-parameter test circuit for connecting to another port of the high-frequency multi-port DUT.

System, device, and method for embedded S-parameter measurement

A distributed RF/microwave power detector for detecting the power of a signal is provided. The distributed RF/microwave power detector includes a power detector on or at least partially embedded in a single substrate. The distributed RF/microwave power detector includes a detection unit that has a distributed amplifier for amplifying the signal and outputting an amplified signal, and a detector for detecting the power of the amplified signal. The distributed RF/microwave power detector further includes at least one additional detection unit cascaded with the first. The additional detection unit includes an additional distributed amplifier for amplifying the amplified signal and outputting a further amplified signal, as well as an additional detector for detecting a power of the further amplified signal. The distributed RF/microwave power detector also includes a multiplexer for multiplexing outputs of the detector and at least one additional detector, each having a dynamic range different from the other.

Distributed RF/microwave power detector

A broadband active balun configuration is provided. According to embodiments, the subject active balun can include a cascade and cascade transistor pair using a shared input transistor. In a further implementation, a low-pass bias-feedback mechanism for maintaining stable bias conditions can be provided.

Broadband active balun

Embedded IC test circuits and methods

The x-ray imaging system comprises an x-ray source for producing an x-ray beam having an energy of at least 30 kVp and an x-ray detector. The x-ray detector comprises a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices. The detector is responsive to x-rays of at least 30 keV to directly produce free electrons which interact with the charge storage devices.

X-ray imaging system and solid state detector therefor

The invention comprises a scintillator for converting impinging x-rays into visible light; a sensor array having two opposed surfaces with a plurality of detectors at one of the surfaces and having the other of the surfaces facing the scintillator; and a plurality of processing circuits facing the one surface and connected to the detectors by bump bonds. Another feature of the invention is a gain stage in close proximity to sensors, which may be MOS capacitors. A single gain stage may be connected to one capacitor or may be connected to several at one time.

Growing community of inventors

Gainesville, FL, United States of America

Robert M Fox