Dragonwave Inc.

Huawei Technologies Co., Limited

Nortel Networks Corporation

Northern Telecom Limited

Robert Leroux

Michael Cooper

Gordon Glen Rabjohn

Johan M Grundlingh

Mark S Suthers

John Ilowski

Russell Smiley

Irfan Muhammad Fazal

John McRory

An analog radio over fiber (AROF) wavelength division multiplexing (WDM) system and method for reducing adjacent channel leakage ratio (ACLR) in a radio frequency signal provided by an AROF WDM system are provided. The AROF WDM system comprises a plurality of transmitters, a multiplexer, a demultiplexer, a plurality of receivers and a controller. Each transmitter is for receiving a radio frequency input signal and for modulating the radio frequency input signal onto an optical signal to obtain a modulated optical signal. The multiplexer is for receiving each modulated optical signal from the plurality of transmitters and for combining the modulated optical signals into a combined optical signal to be sent a distance over an optical fiber. The multiplexer has a pluralities of passbands with each passband having a center wavelength. The demultiplexer is for receiving the combined optical signal and for separating the combined optical signal back into the individual modulated optical signals. Each receiver is for receiving one of the modulated optical signals from the demultiplexer and for converting the received modulated optical signal into a radio frequency output signal. The controller is configured to detune, for each transmitter, one of that transmitter and the multiplexer relative to the other such that a wavelength of the modulated optical signal transmitted by that transmitter is longer than the center wavelength of a corresponding one of the plurality of passbands of the multiplexer.

Systems and methods for reducing adjacent channel leakage ratio

A multi-layered integrated RF/IF circuit board is provided. The board is fabricated beginning with a center layer of material. In a first preferred embodiment, the center layer is a rigid core material. In a second preferred embodiment, the center layer is a pliable non-conductive material. For every layer added to the upper surface of the stack-up structure of the board, a corresponding layer of the same material is added to the lower surface of the stack-up structure. Thus, during the lamination process, both the upper and lower surfaces are primarily soft, pliable non-conductive material. These non-conductive layers absorb any stresses introduced during the lamination process. Thus, when cooled, the board has large area flatness. Standard manufacturing processes can be used for each individual step in the fabrication of the board. Therefore, a multi-layered integrated RE/IF circuit board in accordance with the present invention can be fabricated inexpensively.

Multi-layer integrated RF/IF circuit board including a central non-conductive layer

A multi-layered integrated RF/IF circuit board is provided. The board is fabricated beginning with a center layer of material. In a first preferred embodiment, the center layer is a rigid core material. In a second preferred embodiment, the center layer is a pliable non-conductive material. For every layer added to the upper surface of the stack-up structure of the board, a corresponding layer of the same material is added to the lower surface of the stack-up structure. Thus, during the lamination process, both the upper and lower surfaces are primarily soft, pliable non-conductive material. These non-conductive layers absorb any stresses introduced during the lamination process. Thus, when cooled, the board has large area flatness. Standard manufacturing processes can be used for each individual step in the fabrication of the board. Therefore, a multi-layered integrated RF/IF circuit board in accordance with the present invention can be fabricated inexpensively.

Multi-layer integrated RF/IF circuit board

A biasing method and apparatus which provides bias circuits of radio frequency (RF) power transistors with a low reactive impedance at low frequencies to reduce hysteresis related distortion without affecting the transistor input or output impedance or any impedance matching network which may be used. In one embodiment, reduced hysteresis within a lateral diffused metal-oxide semiconductor (LDMOS) transistor is brought about by a drain bias circuit without any impact on the transistor output impedance. By removing the effect of the bias circuit at RF frequencies, the bias circuit can be designed with a low reactive impedance at low frequencies without any material consequences on the transistor output impedance. With a low enough reactive impedance, the hysteresis introduced by the bias circuit is substantially reduced. An auxiliary bias feed external to an RF transistor package is also embodied.

Method and apparatus for reducing transistor amplifier hysteresis

A stacked power amplifier is provided in which an input signal is independently coupled to each of a series of amplifying devices in the stack. A transformer is used at the input circuit of each device to create an RF swing across each amplifying device which is substantially equal. This results in an equal distribution of RF and DC voltage among the devices in the stack.

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Ottawa, Canada

Robert Leroux