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Robert Leon Stamps

Burkard Hillebrands

A digital magnetic memory cell device for read and/or write operations having a first and a second magnetic layer, the magnetization of which is oriented parallel or antiparallel for the storage of digital information. An intermediate layer is disposed between the first and second magnetic layers. A pair of intersecting conductors are disposed to switch the magnetization of at least one of the two magnetic layers in a memory cell defined by the intersection thereof when a read or a write current is applied thereto. The conductors intersect at an angle &bgr; so that current pulses having a pulse duration <10 ns make it possible to switch the magnetization of a cell fully and securely from a parallel to an antiparallel orientation and vice versa.

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Leederville, Australia

Robert Leon Stamps