Honeywell G.m.b.h.

Honeywell International Inc.

Micron Technology Incorporated

Robert L Rabe

Keith W Golke

Gregory A King

David K Nelson

Timothy V Statz

Greg Rausch

Kang W Lee

Michael R Hegre

Curtis Schnarr

Paul J Swan

Milam Paraschou

Keith Goike

An example apparatus for writing a bit to a memory cell includes wordline driver circuitry configured to generate a first voltage in response to a row access enable signal. The apparatus also includes boost driver circuitry coupled to the wordline driver circuitry. The boost driver circuitry is configured to charge a capacitor using the first voltage and to generate a second voltage using the first voltage and a voltage at the capacitor in response to a boost enable signal. The apparatus also includes a wordline coupled to the memory cell and the wordline driver circuitry. The wordline is configured to output the first voltage or the second voltage to the memory cell.

Wordline boost driver

A method for storing data includes determining, using a first match line, that a match word satisfies a first content addressable memory (CAM) word stored in a CAM array, wherein the CAM array is configured to store a second CAM word that matches the first CAM word. The method further includes determining that a first parity bit associated with the first CAM word matches a first parity of the first CAM word. The method further includes, in response to determining that the first parity bit associated with the first CAM word matches the first parity determining, using the first match line, a first random access memory (RAM) word stored in a RAM array and outputting the first RAM word.

Dual redundant memory radiation hardening

A circuit comprises a data storage element that includes a sampling stage configured to sample a data value, the sampling stage comprising a plurality of p-type devices, wherein at least one of the plurality of p-type devices is non-collinear relative to the other p-type devices, a plurality of n-type devices, wherein at least one of the plurality of n-type devices is non-collinear relative to the other n-type devices, a feedback stage configured to maintain the data value sampled by the sampling stage.

Data register for radiation hard applications

In some examples, a system, such as an integrated circuit device (IC), includes functional elements interspersed with access elements and associated test elements. The access elements and associated test elements may be used to determine a health status of the IC or an area of the IC. A health status determination can include, for example, identification of an area of the IC where performance may have degraded (e.g., has degraded or is about to degrade beyond desirable levels of performance). For example, a test element can be configured to generate a parametric output in response to an electrical stimulus, where the parametric output indicates a health status of one or more functional elements of the IC.

Using test elements of an integrated circuit for integrated circuit testing

A system and method of conditioning differential clock signals iteratively adjusts the duty cycles and phases of the clock signals. The duty cycles of the clock signals are adjusted by comparing respective voltage corresponding to the duty cycles of respective clock signals in each of the differential pairs. The result of the comparison is used to adjust the duty cycles of the clock signal until the magnitudes of the voltages are substantially equal. The phases of the clock signals are adjusted by selecting two sets of two clock signals each that are assigned relative phases that differ from each other by the same amount. The selected sets of clock signals are processed so that the duty cycles of resulting signals correspond to the phases of the clock signals. The duty cycle of these signals is measured as described above and used to adjust the phases of the clock signals.

System and method for conditioning differential clock signals and integrated circuit load board using same

A peak voltage detector is used to detect the absolute value of the peak differential amplitude of a differential input signal. The peak voltage detector includes a differential amplifier receiving the differential input signal and generating a corresponding pair of differential output signals. The voltage detector also includes a capacitor on which an output signal is generated. A first differential comparator generates a first signal whenever the differential voltage from the differential amplifier is greater than the voltage of the output signal. A second differential comparator generates a second signal whenever the negative of the differential voltage from the differential amplifier is greater than the voltage of the output signal. A current source applies current to the capacitor responsive to receiving either the first or second signal. The amplitude of the feedback voltage is thus equal to the absolute value of the peak differential amplitude of the input signal.

Absolute value peak differential voltage detector circuit and method

A differential pair of transistors includes a first transistor and a second transistor having their sources coupled together. Their sources are further coupled to ground via a pull-down network. A single-ended output is coupled to the drain of the second of the pair of differential transistors. A differential current adjust circuit is coupled to a drain of the first of the pair of differential transistors, and the current adjust circuit is configured so that the second side of the differential output driver circuit conducts approximately the same current as the first side of the differential output driver circuit.

Single-ended pseudo-differential output driver

A data storage latch which permits forming a feedback loop for storage and permits storing data signals in an open loop configuration using logic circuit elements based on cross-coupled transistor loads.

Switching state retention circuit

A monolithic integrated circuit memory control operating through the use of MOS field-effect transistors with diode or bipolar circuit arrangement for the bit line column switching.

Read-only memory

A fuse status detection circuit for determining the conduction of fuses used in integrated circuits is disclosed based on a flip-flop circuit containing the fuses which is set to an initial state during operation.

Fuse status detection circuit

A cross-coupled load logic gate family which will keep voltage at a logic gate output below that of a switching threshold and a subsequent logic gate during a charge disturbance upset.

Charge disturbance resistant logic circuits utilizing true and

A memory system having voltage level circuit switching portions operated between signal lines stabilized by additional capacitance.

Memory circuit enchancement to stablize the signal lines with additional

An interface circuit to couple logic signals from a logic gate of one kind of logic family to a logic gate of another operating at different logic state voltages, where a latch circuit is used with the first of two cascaded inverters to provide the desired interface circuit signal characteristics. One inverter is provided with a supply reduction threshold means as is another inverter in the latch so that the two inverters perform substantially similarly to one another. The latch allows independent adjustments of opposite direction logic level transitions to provide a desired noise margin.

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Maple Grove, MN, United States of America

Robert L Rabe