Rockwell Collins, Inc.

Robert L Palandech

Mark M Mulbrook

Nathan P Lower

Nathaniel P Wyckoff

William L Cronbaugh

The present invention is a method for producing a capacitor. The method includes applying a dielectric substance (ex.&#x2014;silicon nitride) to a first gold seed layer, the first gold seed layer being formed on a wafer. A second gold seed layer is formed upon the dielectric substance and first gold seed layer. Gold is electroplated into a photoresist to form a first set of 3-D capacitor elements on the second gold seed layer. A first copper layer is electroplated onto the second gold seed layer. Gold is electroplated into a photoresist to form a second set of 3-D capacitor elements, the second set of 3-D elements being formed at least partially within the first copper layer and being connected to the first set of 3-D elements. A second copper layer is electroplated onto the first copper layer. Then, both copper layers are removed to provide (ex.&#x2014;form) the capacitor.

Method for producing a microfabricated in-plane radio frequency (RF) capacitor

The present invention is directed to a microfabricated RF capacitor. The capacitor includes two signal wirebond pads configured for being connected to an electrical current source. The capacitor further includes two backbone structures which are connected to the wirebond pads and receive electrical current from the electrical current source via the wirebond pads, each backbone structure including a first backbone portion and a second backbone portion. The capacitor further includes a plurality of protrusions which are connected to the backbone portions of the backbone structures. The protrusions are spaced apart from each other and parallel to each other. Further, the protrusions are configured for distributing current received by the backbone structures and for promoting structural stability of the capacitor. The capacitor further includes a ground wall structure which may be configured for receiving ground current from a ground current source.

Microfabricated RF capacitor

The present invention is directed to a corner interconnect component which is a passive filter component. The corner interconnect component includes a body portion having an input structure located at a first corner of the component for receiving an input. At a second corner of the component, diagonally opposite the first corner, the component further includes an output structure for providing an output. The corner interconnect component further includes a conducting portion which is connected to the first and second corners of the body structure. The corner interconnect component is configured such that a plurality of the corner interconnect components may be implemented in a corner-to-corner configuration in a filter structure.

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Marion, IA, United States of America

Robert L Palandech