Bae Systems Information and Electronic Systems Integration Inc.

Robert L Kamocsai

Vu Anh Vu

Andrew T S Pomerene

Daniel N Carothers

Craig M Hill

Andrew T Pomerene

Timothy J Conway

Sandra L Hyland

Rick L Thompson

Daniel J O'Donnell

Joe Giunta

Jonathan N Ishii

A waveguide having a substrate, a first germanium sidewall and a second germanium sidewall. The waveguide is formed by growing the first germanium sidewall and second germanium sidewall on the substrate.

Faceted, germanium slotted waveguide

A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth.

Method for growing germanium/silicon&#x2014;germanium superlattice

A method for manufacturing a photodetector including growing a quantity of germanium within an optical pathway of a waveguide. The detection of a current caused by an interaction between the optical signal and the germanium is used to indicate the presence of an optical signal passing through the waveguide.

In-line germanium avalanche photodetector

An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.

Method for manufacturing lateral germanium detectors

A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.

Growing community of inventors

Manassas, VA, United States of America

Robert L Kamocsai