Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Robert L Brainard

Gary N Taylor

Shintaro Yamada

Charles R Szmanda

Manuel doCanto

Joseph F Lachowski

Robert L Auger

Compositions and methods useful for the removal of polymeric material from substrates, such as electronic devices are provided. These compositions and methods are particularly suitable for removing polymer residues from electronic devices following plasma etch processes.

Stripper for electronics

This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.

Polymers and photoresist compositions for short wavelength imaging

In a first aspect, polymers of the invention in general comprise a photoacid-labile unit that can generate multiple anions or acidic groups such as hydroxy (particularly phenolic) preferably from a single photoacid-induced polymer deprotection reaction. In a further aspect, polymers of the invention comprise a photoacid-labile unit that generate substantially or essentially no volatile species species during a photoacid-induced deprotection reaction of the polymer to thereby avoid undesired outgassing and/or shrinkage of a resist coating layer containing a polymer of the invention. In particularly preferred aspects of the invention, polymers are provided that combine both aspects, i.e. the polymers contain blocking groups that can generate multiple anions or acid groups preferably from a single photoacid-induced polymer deprotection reaction, and those blocking groups also generate substantially no volatile species during microlithographic processing. Polymers of the invention are particularly useful as components of photoresist compositions, particularly chemically-amplified positive resists.

Polymers and photoresist compositions comprising same

A method for making an acrylic resin photoresist characterized by polymerization of an acrylic monomer in a solvent that dissolves all monomers and resultant polymers. The use of the solvent permits formation of acrylic resins suitable for use in the preparation of photoresists without recovery from its reaction mixture. Photoresists prepared from such polymers have improved transparency, especially at exposures of 193 mn or less.

Growing community of inventors

Wayland, MA, United States of America

Robert L Brainard