Lam Research Corporation

Robert Knop

Brian K McMillin

Thomas W Anderson

Michael S Barnes

Aleksander Owczarz

Mike Ravkin

Alan M Schoepp

Carl Woods

Tuan Ngo

Christopher H Olson

A substrate holding and transporting assembly is disclosed. The substrate holding and transporting assembly includes a base plate and a pair of clamps connected to the base plate in a spaced apart orientation, the spaced apart orientation of the pair of clamps enable support of a substrate with at least two independent points. The substrate holding and transporting assembly also includes an electrode assembly connected to the base plate at a location that is substantially between the pair of clamps. The electrode assembly defined to impart an electrical contact to the substrate when present and held by the pair of clamps.

Substrate gripper with integrated electrical contacts

A system and method of generating RF includes an RF generator, a variable DC power supply, and a comparator. The RF generator has an RF output coupled to an input of the transducer. The variable DC power supply has a control input and a DC output coupled to the RF generator. The comparator includes a first input coupled to a set point control signal, a second input coupled to the RF generator RF output, and a control signal output coupled to a voltage control input on the variable DC power supply.

System, method and apparatus for constant voltage control of RF generator for optimum operation

A system and method of providing RF to a transducer includes an oscillator, an RF generator, and a voltage phase detector. The oscillator has a frequency control input and an RF signal output. The RF generator has an input coupled to the oscillator RF signal output and an RF generator output coupled to the transducer. The voltage phase detector includes a first phase input coupled to the RF signal output of the oscillator, a second phase input coupled to the RF generator output, and a frequency control signal output coupled to the oscillator frequency control voltage input.

Phase control of megasonic RF generator for optimum operation

A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines.

Gas distribution apparatus for semiconductor processing

Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.

Method and device for compensating wafer bias in a plasma processing chamber

A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying the mixed gas to the first and second zones, the control valve being adjusted such that a rate of flow of the mixed gas in the first and/or second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and second zones.

Growing community of inventors

Fremont, CA, United States of America

Robert Knop