Technic, Inc.

Robert Kaufman

Gary C Downes

Daniel J Gramarossa

Norman A Butler

A plating apparatus is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer.

Apparatus for plating wafers, substrates and other articles

A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer. In addition, the plating apparatus and method configure the electrostatic field between the anode and cathode in a manner that improves the uniformity of the current distribution across the surface of the wafer to provide a more uniform plating of the wafer. Also, a secondary cathode is provide between the anode and cathode to alter the electrostatic field in order to improve the uniformity of the plating deposition across the surface of the wafer. With regard to minimizing damage to the wafer, the plating apparatus and method provides a conductive liquid to effectuate the cathode contact to the surface of the wafer.

Apparatus and method for plating wafers, substrates and other articles

An apparatus and method for inserting and removing a wafer into and from a plating apparatus, includes an elongated primary arm having a wafer seat for supporting the wafer, an elongated secondary arm for supporting the primary arm, and a mounting surface for supporting the secondary arm. The apparatus further includes a drive band mechanically coupled to the primary arm for causing the movement thereof. The drive band includes a portion wound around a drum that is driven by a motor. The motor, in rotating the drum, causes the drive band to move the primary arm along an axis between a retracted position wherein the primary arm, the secondary arm, and the mounting surface are in a stacked relationship, and an extended position wherein the secondary arm protrudes from the mounting surface along the axis, and the primary arm protrudes from the secondary arm along the axis.

Apparatus and method for inserting a wafer, substrate or other article into a process module

A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer.

Apparatus and method for electroplating wafers, substrates and other articles

A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformnity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer.

A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

A plating chemical replenishment system is described having a tank for supporting a chemical solution used in a plating fluid, a container having a pre-determined volume, a first valve for selectively coupling the chemical solution from the tank to the container to form a pre-determined volume of the chemical solution within the container, and a second valve for selectively dispensing the pre-determined volume of the chemical solution from the container to a plating fluid reservoir. Also disclosed is a method of dispensing a plating solution to a plating fluid reservoir, comprising the steps of forming a pre-determined volume of the plating solution; and dispensing the pre-determined volume of the plating solution to the plating fluid reservoir. In addition, a plating system is provided for plating a surface of an article, comprising a plating fluid tank for supporting a plating fluid reservoir, a plating apparatus for using plating fluid from the plating fluid reservoir to plate the surface of the article; and a plating chemical replenishment system. The replenishment system has a chemical solution tank for supporting a chemical solution used in a plating fluid; a container having a pre-determined volume; a first valve for selectively coupling the chemical solution from the chemical solution tank to the container to form a pre-determined volume of the chemical solution within the container; and a second valve for selectively dispensing the pre-determined volume of the chemical solution from the container to the plating fluid reservoir.

Plating fluid replenishment system and method

A plating apparatus, anode assembly, and method therefor are disclosed herein that improves the uniformity of the plating deposition across the surface of a wafer, substrate or article. This improvement is accomplished by compensating for the uneven plating deposition caused by a seed layer disposed on the article. The seed layer typically has a high resistance. As a result of the high resistance characteristic of the seed layer, plating currents that flow through substantial portion of the seed layer to the cathode contact encounter more resistance than plating currents that flow through less seed layer. This produces non-uniformity in the plating currents across the surface of the wafer, which results in an uneven plating deposition across the surface of the wafer. The plating apparatus, anode, and method therefor provide an anode having a plurality of separate anode sections designed to plate different surface regions of the wafer. The anode sections are applied with respective anode voltages selected or configured to provide a more uniform plating current distribution across the surface of the wafer. As a result, a more uniform plating deposition across the surface of the wafer may be achieved by proper design of the anode sections and the voltages exciting respective anode sections.

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Canoga Park, CA, United States of America

Robert Kaufman