Semiconductor Components Industries, LLC

Omnivision Technologies, Inc.

Robert Kaser

Shen Wang

John Paul McCarten

Hung Q Doan

Robert P Fabinski

Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.

High dynamic range storage gate pixel circuitry

A source/drain region of a transistor or amplifier is formed in a substrate layer and is connected to a voltage source. A glow blocking structure is formed at least partially around the source/drain region and is disposed between the source/drain region and an imaging array of an image sensor. A trench is formed in the substrate layer adjacent to and at least partially around the source/drain region. The glow blocking structure includes an opaque material formed in the trench and one or more layers of light absorbing material overlying the source/drain region and the opaque material.

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Spencerport, NY, United States of America

Robert Kaser