Massachusetts Institute of Technology

United States of America As Represented by the Secretary of the Air Force

Robert K Reich

Bernard B Kosicki

Brian F Aull

Dennis D Rathman

Barry E Burke

David C Shaver

Eugene D Savoye

Daniel R Schuette

Carl O Bozler

Harry R Clark

Shaun R Berry

Andrew H Loomis

Matthew J Renzi

Robert P Berger

Philip J Bos

Antonio Sanchez-Rubio

Brian M Tyrrell

Jonathan C Twichell

James E Carrick

Allen M Waxman

Thomas H Jeys

Douglas Bryant

Alvin Gabriel Stern

R Allen Murphy

Richard M Osgood, Iii

Jeremy Bert Muldavin

James A Gregory

Richard J Molnar

David A Fay

Alan N Gove

David L Spears

William H McGonagle

Robert W Mountain

Richard Osgood

Jinendra K Ranka

Bradley J Felton

Douglas J Young

Valerie A Finnemeyer

Bernard Kosicji

Michael Rose

Liquid crystal photonic devices and microcavities filled with liquid crystal materials are becoming increasingly popular. These devices often present a challenge when it comes to creating a robust alignment layer in pre-assembled cells. Previous research on photo-definable alignment layers has shown that they have limited stability, particularly against subsequent light exposure. A method of infusing a dye into a microcavity to produce an effective photo-definable alignment layer is described, along with a method of utilizing a pre-polymer infused into the microcavity mixed with the liquid crystal to provide photostability. In this method, the polymer layer, formed under optical irradiation of liquid crystal cells, is effectively localized to a thin region near the substrate surface and thus provides a significant improvement in the photostability of the liquid crystal alignment. This versatile alignment layer method, which can be used in microcavities to displays, offers significant promise for new photonics applications.

Methods and apparatus for liquid crystal photoalignment

The high-pixel-count uncooled thermal imaging arrays disclosed herein have liquid crystal (LC) microcavity transducers separate from the read-out integrated circuit (ROIC). The transducer converts incident infrared (IR) radiation in birefringence changes that can be measured with visible light. In other words, the system uses the temperature sensitivity of the LC birefringence to convert the IR scene to a visible image. Measurements on sample arrays indicate that the LC material quality is similar to that of bulk samples and has good noise performance. Additionally, high-fill-factor arrays on fused-silica substrates may be processed to enable optimization of conditions for greatly improved temperature sensitivity. An additional IR absorber layer may be integrated into the process to tune the structure for the infrared.

Systems, methods, and apparatus for sensitive thermal imaging

Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.

Single-electron detection method and apparatus for solid-state intensity image sensors with a charge splitting device

Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.

CMOS readout architecture and method for photon-counting arrays

Single-electron detection method and apparatus for solid-state intensity image sensors with a charge-metering device

A photodiode is provided by the invention, including an n-type active region and a p-type active region. A first one of the n-type and p-type active regions is disposed in a semiconductor substrate at a first substrate surface. A second one of the n-type and p-type active regions includes a high-field zone disposed beneath the first one of the active regions at a first depth in the substrate, a mid-field zone disposed laterally outward of the first active region at a second depth in the substrate greater than the first depth, and a step zone connecting the high-field zone and the mid-field zone in the substrate.

High fill-factor avalanche photodiode

A particle detection system that images and detects particles in a fluid flow stream through use of detector array(s) is described. The detection system may include light source arrays that may selectively illuminate a particle in a fluid stream. The detection system may also include a detector array employing smart binning to read the measured signals. The smart binning of the detector array may be achieved through knowledge of an exact particle location provided by a position sensitive detector. The detector array(s) may be low cost based on intelligence built into the system. This particle detection system may be particularly useful for detection and discrimination of different particle types since the read-out of the particle signals can be accomplished with low noise and can be flexible enough to optimize the read out measurements for each particle. The particle detection system may be used, for example, in early warning contamination detection systems and manufacturing processes.

Method and apparatus for detecting and discriminating particles in a fluid

A photon-counting Geiger-mode avalanche photodiode intensity imaging array includes an array of pixels, each having an avalanche photodiode. A pixel senses an avalanche event and stores, in response to the sensed avalanche event, a single bit digital value therein. An array of accumulators are provided such that each accumulator is associated with a pixel. A row decoder circuit addresses a pixel row within the array of pixels. A bit sensing circuit converts a precharged capacitance into a digital value during read operations.

Digital photon-counting geiger-mode avalanche photodiode solid-state monolithic intensity imaging focal-plane with scalable readout circuitry

A large format imager includes an array of pixels for converting electromagnetic radiation into electrical signals and a trigger to from an optical pulse so as to trigger the pixels to generate an integration period. Each pixel includes a photodiode to convert light intensity of high-frequency radiation into an electrical charge, a reset switch to reset the photodiode, circuitry to enable sampling of the electrical charge produced by the photodiode, a photoswitch to convert an optical trigger pulse, received from the trigger, into an electrical signal, an inverter to produce a control signal corresponding to the electrical signal produced by the photoswitch, and control circuitry to locally generate integration control signals. The integration control signals control a start of an integration period for the photodiode, duration of the integration period for the photodiode, and the sampling of the electrical charge produced by the photodiode. The large format imager may also include a trigger for producing an electrical pulse so as to trigger the pixels to generate an integration period and tree type electrical distribution system for propagating the electrical pulse to all the pixels, wherein each pixel includes a global repeater circuit to propagate a first edge of said electrical pulse along said tree type electrical distribution system and a local repeater circuit to provide a local array of pixels with the first edge of the electrical pulse.

Method and system for distribution of an exposure control signal for focal plane arrays

Described are a method and a device for high speed transmission of a data signal across an electrical interconnect in an integrated circuit. An optical carrier is modulated with a local oscillator signal at a modulation frequency substantially greater than the data signal to generate an optical local oscillator signal. Phototransducers at the ends of the interconnect illuminated by the optical local oscillator signal generate electrical local oscillator signals. At the transmit end of the interconnect, the data signal is mixed with an electrical local oscillator signal to generate an upconverted data signal. After transmission across the interconnect to the receive end, the upconverted data signal is mixed with the electrical local oscillator signal to retrieve the original data signal.

High speed electrical interconnect using an optically distributed carrier signal

The CCD image sensor addresses the problem of noise, due to background charge generated by Compton scattering of gamma rays. In applications, in which an imager must operate in a high-radiation environment, such background noise reduces the video signal/noise. This imager reduces the amount of charge collected from Compton events, while giving up very little sensitivity to photons in the visible/near IR.

Image sensor with reduced sensitivity to gamma rays

A charge-coupled device imager including an array of super pixels disposed in a semiconductor substrate having a surface that is accessible to incident illumination. For each super pixel there is provided a plurality of subpixels which each correspond to one in the sequence of image frames. Each subpixel includes a doped photogenerated charge collection channel region opposite the illumination-accessible substrate surface, a charge collection channel region control electrode, doped charge drain regions adjacent to the channel region, a charge drain region control electrode, and a doped charge collection control region. To each subpixel are provided channel region and drain region control voltage connections, for independent collection and storage of photogenerated charge from the substrate at the charge collection channel region of a selected subpixel during one in the sequence of image frames and for drainage of photogenerated charge from the substrate to a drain region.

High-speed, high-sensitivity charge-coupled device with independent pixel control of charge collection and storage

An imaging system is provided for imaging a scene to produce a sequence of image frames of the scene at a frame rate, R, of at least about 25 image frames per second. The system includes an optical input port, a charge-coupled imaging device, an analog signal processor, and an analog-to-digital processor (A/D). The A/D digitizes the amplified pixel signal to produce a digital image signal formatted as a sequence of image frames each of a plurality of digital pixel values and having a dynamic range of digital pixel values represented by a number of digital bits, B, where B is greater than 8. A digital image processor is provided for processing digital pixel values in the sequence of image frames to produce an output image frame sequence at the frame rate, R, representative of the imaged scene, with a latency of no more than about 1/R and a dynamic range of image frame pixel values represented by a number of digital bits, D, where D is less than B. The output image frame sequence is characterized by noise-limited resolution of at least a minimum number, N.sub.M, of line pairs per millimeter, referred to the charge-coupled imaging device pixel array, in an imaged scene as a function of illuminance of the input light impinging the charge-coupled imaging device pixels.

Low-light-level imaging and image processing

A charge modulation device having a semiconductor region of a first conductivity type. An epitaxial layer of second conductivity type is provided on a portion of the semiconductor region so as to define an FET channel region. A first epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET drain region, the first epitaxial region being electrically isolated from the semiconductor region. A second epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET source region, the second epitaxial region being electrically isolated from the semiconductor region. A third epitaxial region of the first conductivity type or a metal oxide semiconductor is provided to the channel region between the source and drain regions.

Charge modulation device

A charge-coupled device having an array of pixel elements formed in a substrate, which device is operable in a first state to expand the depletion well regions of each pixel element into the substrate for storing incoming photoelectrons therein and in a second state to contract the expanded depletion well regions to prevent storage of photoelectrons in the contracted depletion well regions.

Integrated electronic shutter for charge-coupled devices

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Tyngsborough, MA, United States of America

Robert K Reich