Tel Epion Corporation

Epion Corporation

Robert K Becker

Avrum Freytsis

Matthew C Gwinn

Michael A Graf

Martin D Tabat

Noel Russell

Allen R Kirkpatrick

Michael E Mack

Yan Shao

Christopher K Olsen

Kenneth P Regan

Jerry Negrotti

Christopher T Reddy

Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle &#x3c6;, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Method and apparatus for beam deflection in a gas cluster ion beam system

A nozzle assembly used for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the nozzle assembly includes two or more conical nozzles that are aligned such that they are both used to generate the same GCIB. The first conical nozzle may include the throat that initially forms the GCIB and the second nozzle may form a larger conical cavity that may be appended to the first conical nozzle. A transition region may be disposed between the two conical nozzles that may substantially cylindrical and slightly larger than the largest diameter of the first conical nozzle.

GCIB nozzle assembly

A method of assembling a nozzle/skimmer module includes coupling a nozzle assembly and skimmer cartridge assembly in a rigid tandem configuration to more accurately control the formation of the Gas Cluster Ion Beam (GCIB). The nozzle/skimmer module is pre-aligned before installation in a production GCIB processing system to more accurately position the GCIB.

Pre-aligned nozzle/skimmer

Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus. The apparatus further includes shields and other features for reducing process contamination resulting from scattering of the GCIB from the scanning apparatus.

Low contamination scanner for GCIB system

Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.

Multiple nozzle gas cluster ion beam system

A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.

Gas cluster ion beam system with rapid gas switching apparatus

Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiOSTI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.

Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles

A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.

Multiple nozzle gas cluster ion beam processing system and method of operating

Apparatus and methods for improving beam stability in high current gas-cluster ion beam systems by reducing the frequency of transients occurring in the vicinity of the ionizer through use of shielding conductors and distinct component electrical biasing to inhibit backward extraction of ions from the ionizer towards the gas-jet generator.

Method and apparatus for improved beam stability in high current gas-cluster ion beam processing system

Numerous studies suggest that the current popular designs of coronary stents are functionally equivalent and suffer a 16 to 22 percent rate of restenosis. Although the use of coronary stents is growing, the benefits of their use remain controversial in certain clinical situations or indications due to their potential complications. The application of gas cluster ion beam (GCIB) surface modification such as smoothing or cleaning appears to reduce these complications and lead to genuine cost savings and an improvement in patient quality of life. The present invention is directed to the use of GCIB surface modification to overcome prior problems of thrombosis and restenosis. The atomic level surface smoothing of stents utilizing GCIB substantially reduces undesirable surface micro-roughness in medical coronary stents.

Growing community of inventors

Danvers, MA, United States of America

Robert K Becker