Rohm & Haas Electronic Materials LLC

Morton International, Inc.

Rohm and Haas Company

Shipley Company LLC

Dow Global Technolgoies LLC

Sun Chemical Corporation

Rohm and Haas Electronics Materials LLC

Nichigo-morton Co., Ltd.

Eternal Technology Corporation

Norton International, Inc.

Nichigo-morton

Robert K Barr

Daniel E Lundy

Corey O'Connor

James G Shelnut

James T Fahey

Edgardo Anzures

Edward J Reardon

Michael K Gallagher

Krishna Balantrapu

Hua Dong

Kevin Y Wang

Duane R Romer

Michael P Toben

Kim Sang Ho

Matthew Martin Yonkey

Elissei Iagodkine

Randall W Kautz

Raymond Chan

Thomas Charles Sutter

Colin Hayes

Xiang Qian Liu

Raymond J Thibault

Colin Calabrese

Gregory D Prokopowicz

Mitchell G Male

Lincoln Eramo, Jr

Shigeru Murakami

Eiji Kosaka

David Fleming

Matthew L Moynihan

Michelle Bowerman Riener

Brian D Amos

Stephen E Bottomley

Herong Lei

Colin O'Mara Hayes

Betsy Dadah

Thanh N Tran

Tina Aoude

Gene A Derrico

Stephen Wheeler

John J Piskorski

David Louis Danza

Edward J Brady

Stephen H Wheeler

Edward Anzures

The present disclosure relates to a photosensitive composition comprising a photoinitiator and a bismaleimide component, photopolymers comprising the photosensitive composition and their use, especially in electronic devices. The bismaleimide component includes a bismaleimide compound or a bismaleimide oligomer.

Photosensitive bismaleimide composition

There is provided a polymer which is the copolymerization product from a mixture including: (a) 10-50 mol % of at least one addition polymerizable arylcyclobutene monomer; (b) 15-50 mol % of at least one addition polymerizable diene monomer; and (c) 15-60 mol % of at least one addition polymerizable aromatic vinyl monomer. The polymer can be used in electronic applications.

Polymeric resin for dielectric applications

Disclosed herein is a method of forming vias in electrical laminates comprising laminating a sheet having a layer comprising a crosslinkable polymer composition to a substrate wherein the crosslinkable polymer composition has a viscosity at lamination temperatures in the range of 200 Pa-s to 100,000 Pa-s, forming at least one via in the crosslinkable polymer layer by laser ablation; and after the forming of the at least one via, thermally curing the crosslinkable polymer layer. According to certain embodiments the cross linkable polymer composition has a viscosity at lamination temperature of at least 5000 Pa-s. This method yields good lamination results, good via profiles, and good desmear results when such compositions are used and the via is laser ablated before cure.

Methods of manufacturing printed wire boards

Actinic radiation curable inks are selectively applied to flexible films which allow the transmission of actinic radiation and then are applied such that the side of the flexible films on which the curable inks are applied contact surfaces of three dimensional substrates. Actinic radiation is applied to the flexible films which cause the ink to cure on the three dimensional substrate. The flexible films are removed leaving the cured ink on the substrates.

Imaging three dimensional substrates using a transfer film

Arylclobutene-containing multi-functional monomers are useful in the preparation of arylcyclobutene-based polymer coatings. Compositions comprising one or more arylclobutene-containing multi-functional monomers and one or more oligomers comprising as polymerized units one or more arylcyclobutene monomer provide arylcyclobutene-based polymer coatings having reduced stress. Such compositions are useful in the manufacture of electronic devices.

Arylcyclobutenes

An aqueous acidic composition which includes alkaline compounds, fluoride ions and oxidizing agents is provided for texturing polycrystalline semiconductors. Methods for texturing are also disclosed. The textured polycrystalline semiconductors have reduced reflectance of light incidence.

Polycrystalline texturing composition and method

Hot melt compositions include non-aromatic cyclic (alkyl)acrylates and low acid number waxes. Upon application of actinic radiation, the hot melt compositions cure to form resists. They may be stripped from substrates with high alkaline strippers. The hot melt compositions may be used in the manufacture of printed circuit boards and photovoltaic devices.

Hot melt compositions with improved etch resistance

The methods involve selectively depositing a resist containing a solid hydrogenated rosin resin and a liquid hydrogenated rosin resin ester as a mixture on a semiconductor followed by etching uncoated portions of the semiconductor and simultaneously inhibiting undercutting of the resist. The etched portions may then be metallized to form current tracks.

Inkjet printable etch resist

Monocrystalline semiconductor substrates are textured with alkaline solutions to form pyramid structures on their surfaces to reduce incident light reflectance and improve light absorption of the wafers. The alkaline baths include hydantoin compounds and derivatives thereof in combination with alkoxylated glycols to inhibit the formation of flat areas between pyramid structures to improve the light absorption.

Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance

Methods include selectively depositing a phase change resist having high light transmittance onto a dielectric to form a pattern, etching away portions of the dielectric not covered by the resist and depositing a metal seed layer on the etched portions of the dielectric. A metal layer is then deposited on the metal seed layer by light induced plating.

Inhibiting background plating

Hot melt etch resist is selectively applied to an anti-reflective coating or a selective emitter on a semiconductor wafer. The exposed portions of the anti-reflective coating or selective emitter are etched away using an inorganic acid containing etch to expose the semiconductor surface. The hot melt etch resist is then stripped from the semiconductor with an alkaline stripper which does not compromise the electrical integrity of the semiconductor. The exposed semiconductor is then metalized to form current tracks.

Method of stripping hot melt etch resists from semiconductors

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Shrewsbury, MA, United States of America

Robert K Barr