Lucent Technologies Inc.

Agere Systems Inc.

Robert John Griffin

Charles Walter Pearce

Joseph Paul Blasko

The present invention provides a method of manufacturing a semiconductor device, and a related method manufacturing an integrated circuit. In one embodiment, the method of manufacturing a semiconductor device includes creating a source/drain region between an electrode and an isolation structure located on a substrate. The method further includes implanting a dopant at a predetermined implant dopant concentration through an opening formed in a channel stop mask and located between the electrode and the isolation structure to form a channel stop between the source/drain region and the isolation structure.

Method of manufacturing a channel stop implant in a semiconductor device

A method of fabricating an integrated circuit device is described in which fluorine ions are implanted into the patterned photoresist and the exposed polysilicon layer prior to etching the polysilicon. The ion implantation minimizes the chemical reaction between the photoresist and etchant, thereby significantly reducing the formation of polysilicon etch delta, and also significantly reducing etch delta variation due to pattern density variations.

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Blandon, PA, United States of America

Robert John Griffin