Applied Materials, Inc.

Samsung Display Co., Ltd.

Koninklijke Philips Corporation N.v.

Varian Semiconductor Equipment Associates, Inc.

Robert Jan Visser

Prerna Sonthalia Goradia

Byung Sung Kwak

Geetika Bajaj

Ludovic Godet

Manivannan Thothadri

Ranga Rao Arnepalli

Abhijit Basu Mallick

Fei C Wang

Chung-Chia Chen

Wan-Yu Lin

Nitin K Ingle

Gang Yu

Rutger Meyer Timmerman Thijssen

Lorenza Moro

Wayne McMillan

Dinesh Kabra

Tapashree Roy

Tapash Chakraborty

Lisong Xu

Avishek Ghosh

Michael Yu-tak Young

Hyunsung Bang

John M White

Christopher Dennis Bencher

Todd J Egan

Byung-Sung Kwak

Yeishin Tung

Steven Verhaverbeke

Pramit Manna

Rui Cheng

Mingwei Zhu

Kaushal Kishore Singh

Kyuil Cho

Dong-Won Han

Nilesh Chimanrao Bagul

Nir Yahav

Anchuan Wang

Nag B Patibandla

Mikhail Korolik

Jinxin Fu

Kurtis Leschkies

Bhaskar Kumar

Yongan Xu

Zihao Yang

Naamah Argaman

Darshan Thakare

Srinivas Gandikota

Guoheng Zhao

Xin Liu

Zihui Li

Omkaram Nalamasu

Chung-Chih Wu

Wei-Kai Lee

Nitin Deepak

Jingjing Xu

Hoang Yan Lin

Guo-Dong Su

Srinivas D Nemani

David P Thompson

Randhir P S Thakur

Yan Ye

Mehul B Naik

Deenesh Padhi

Seshadri Ganguli

Dirk Jan Broer

Majeed Foad

He Ren

Arvind Sundarrajan

Yixiong Yang

Lan Yu

Timothy J Miller

Joseph R Johnson

Zhebo Chen

Guan Huei See

Huixiong Dai

Kadthala Ramaya Narendrnath

Vijay Parihar

Ralf Hofmann

Lin Zhang

Jrjyan Jerry Chen

Jacqueline S Wrench

Dong-Kil Yim

Ruiping Wang

Shishi Jiang

Prayudi Lianto

Patrick M Martin

Jie Zeng

Vikram M Bhosle

Timothy B Michaelson

Xi Chu

Victor Pushparaj

Fei Wang

Russell Chin Yee Teo

Charles Gay

Yogita Pareek

Henricus Franciscus Johannus Jacobus Van Tongeren

Miaojun Wang

Amit Chatterjee

Fei Peng

Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.

High quality quantum computer components

A processing method comprises positioning a substrate in a processing chamber and setting a temperature of the substrate to a range of 50° C. to 500° C.; conducting an atomic layer deposition (ALD) cycle on the substrate; and repeating the ALD cycle to form a silicon oxide film. The ALD cycle comprises: exposing the substrate to an aminosilane precursor in the processing chamber by pulsing a flow of the aminosilane precursor; purging the processing chamber of the aminosilane precursor; exposing the substrate to an oxidizing agent by pulsing a flow of the oxidizing agent for a duration in a range of greater than or equal to 100 milliseconds to less than or equal to 3 seconds; and purging the processing chamber of the oxidizing agent.

Deposition of silicon-based dielectric films

A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

SNSPD with integrated aluminum nitride seed or waveguide layer

Embodiments described herein relate to flat optical devices and encapsulation materials for flat optical devices. One or more embodiments include a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d. The first arrangement of the first plurality of pillars includes a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first adhesion-promoting material is disposed over the first arrangement of the first plurality of pillars. A first encapsulation layer is disposed over the first adhesion-promoting material. The first encapsulation layer fills the gap g between adjacent pillars of the first plurality of pillars. The first encapsulation layer includes a fluoropolymer.

Encapsulation materials for flat optical devices

The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.

Method of enhancing contrast while imaging high aspect ratio structures in electron microscopy

An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.

In-line monitoring of OLED layer thickness and dopant concentration

Embodiments described herein relate to flat optical devices and methods of forming flat optical devices. One embodiment includes a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d, and a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first encapsulation layer is disposed over the first arrangement of the first plurality of pillars. The first encapsulation layer has a refractive index of about 1.0 to about 1.5. The first encapsulation layer, the substrate, and each of the pillars of the first arrangement define a first space therebetween. The first space has a refractive index of about 1.0 to about 1.5.

Air-spaced encapsulated dielectric nanopillars for flat optical devices

Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

Selective molecular layer deposition of organic and hybrid organic-inorganic layers

An organic light-emitting diode (OLED) deposition system has a workpiece transport system configured to position a workpiece within the OLED deposition system under vacuum conditions, a deposition chamber configured to deposit a first layer of organic material onto the workpiece, a metrology system having one or more sensors measure of the workpiece after deposition in the deposition chamber, and a control system to control a deposition of the layer of organic material onto the workpiece. The metrology system includes a digital holographic microscope positioned to receive light from the workpiece and generate a thickness profile measurement of a layer on the workpiece. The control system is configured to adjust processing of a subsequent workpiece at the deposition chamber or adjust processing of the workpiece at a subsequent deposition chamber based on the thickness profile.

Digital holography for alignment in layer deposition

An imaging system and a method of manufacturing a metalens array is provided. The imaging system includes a metalens array, and light scattered from an object is split by the metalens array, such that an image is formed in front of an observer. The metalens array is at least partially transparent to visible light, so that the observer can also see the environment. The method of manufacturing the metalens array includes bonding together a plurality of substrates, and dicing the plurality of substrates into metalens arrays. The metalens arrays can be used in the imaging system.

Imaging system and method of manufacturing a metalens array

An imaging system and a method of creating composite images are provided. The imaging system includes one or more lens assemblies coupled to a sensor. When reflected light from an object enters the imaging system, incident light on the metalens filter systems creates filtered light, which is turned into composite images by the corresponding sensors. Each metalens filter system focuses the light into a specific wavelength, creating the metalens images. The metalens images are sent to the processor, wherein the processor combines the metalens images into one or more composite images. The metalens images are combined into a composite image, and the composite image has reduced chromatic aberrations.

Imaging system and method of creating composite images

An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.

Light-emitting diode display devices with mirror

Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Polarizer-free LED displays

A light-emitting diode display including a substrate having a driving circuitry and a plurality of light emitting diode structures disposed on the substrate. Each light-emitting diode structure has a light emitting diode with a light emission zone having a planar portion, and a pigmentless light extraction layer of a UV-cured ink disposed over the light-emitting diode. The light extraction layer has a gradient in index of refraction along an axis normal to the planar portion, and the index of refraction of the light extraction layer decreases with distance from the planar portion.

Light-emitting diode light extraction layer having graded index of refraction

Growing community of inventors

Menlo Park, CA, United States of America

Robert Jan Visser