Texas Instruments Corporation

Robert James Todd

Henry Litzmann Edwards

Xiaoju Wu

A semiconductor device includes a local oxidation of silicon (LOCOS) structure and a shallow trench isolation (STI) structure formed over a semiconductor substrate. A source region is located between the LOCOS structure and the STI structure. A gate structure is located between the source region and the LOCOS structure. A contact may be located over the STI structure electrically connect to the gate structure.

Drain extended NMOS transistor

A semiconductor device includes a NMOS transistor with a back gate connection and a source region disposed on opposite sides of the back gate connection. The source region and back gate connection are laterally isolated by an STI oxide layer which surrounds the back gate connection. The NMOS transistor has a gate having a closed loop configuration, extending partway over a LOCOS oxide layer which surrounds, and is laterally separated from, the STI oxide layer. A lightly-doped drain layer is disposed on opposite sides of the NMOS transistor, extending under the LOCOS oxide layer to a body region of the NMOS transistor. The LOCOS oxide layer is thinner than the STI oxide layer, so that the portion of the gate over the LOCOS oxide layer provides a field plate functionality. The NMOS transistor may optionally be surrounded by an isolation structure which extends under the NMOS transistor.

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Robert James Todd