US Government As Represented by the Secretary of the Army

Robert J Zeto

Maurice Weiner

Anderson H Kim

Robert J Youmans

Louis J Jasper, Jr

Robert A Lux

James F Harvey

Franz X Zimmerman

David Claude Morton

Stephen Levy

Otto J Gregory

Terence Burke

Lawrence E Kingsley

Melvin J Wade

Hardev Singh

John A Costello

Clarence G Thornton

Eugene Hryckowian, Deceased

Sidney Marshall

John C Conrad

Richard C Piekarz

Michelle A Dornath-Mohr

A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.

Optically activated wafer-scale pulser with AlGaAs epitaxial layer

The present invention describes a method of explosively vaporizing a piece f semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material may be formed from crystalline, polycrystalline, or amorphous forms of semiconductor material. After the semiconductor material is vaporized, it coalesces as the plasma begins to cool and is deposited in a collection system. The size and composition of the microparticles formed by this process can be controlled by conditioning the plasma in predetermined manners. In particular, impurities can be introduced either in the target material, in gas introduced in the plasma, or in the gas through which the coalescing microparticles travel prior to deposition.

Fabrication technique for silicon microclusters using pulsed electrical

A method is provided of enhancing the electrical conductivity of indium-toxide electrode stripes in thin film electroluminescent display panels by using an electronic grade glass substrate for the thin film electroluminescent display panels and by the incorporation of a narrow and thick metal bus bar of high electrical conductivity trenched into and coplanar with the surface of the glass substrate and in electrical continuity with the indium-tin-oxide electrode.

Method of enhancing the electrical conductivity of indium-tin-oxide

The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor material while the energy storage device comprises a radio transmission line including a different material, i.e. a dielectric storage medium. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch. A variation comprises the upper and lower metallization layers being formed in the shape of a plurality of discrete straight line segments or strips which extend radially outward from the center and thus forms a quasi-radial structure.

Optically activated sub-nanosecond hybrid pulser

A high power pulse generating system for use in impulse radar systems and e like contains a plurality of pulser units. The pulser units are circular shaped PIN diodes which integrates a light activated switch and a storage capacitor into a single structure formed on a semiconducting wafer. The pulser units have the capability of outputting pulses having a width of less than one nanosecond, facilitating high power output. The outputs of the pulser units are combined when each of the pulser units is simultaneously discharged using multiple laser pulses. In another embodiment a voltage step-up transformer is formed by a PIN diode structure having a diameter of approximately 60 mm. This device has the capability of outputting voltage amplitudes equal to or greater than the voltage level used to charge the PIN diode.

Ligh activated high power integrated pulser

A photoconductive switch with a low threshold energy, high voltage capability and fast rise time consisting of a semiconductive substrate comprised primarily of gallium arsenide, patterned electrodes masked onto the substrate on opposite sides, a power supply and a laser that introduces laser light via fiber optic bundles to the substrate and parallel to the applied electric field.

High power photoconductor bulk GaAs switch

In the manufacture of a thin film electroluminescent display panel, patted transparent electrode stripes on a glass substrate are smoothed by:

Method of smoothing patterned transparent electrode stripes in thin film

The high pressure furnace comprises a cylindrical pressure vessel with fr and rear pressure closures. An electrical heating element is supported within the interior of the pressure furnace. The front closure supports a relatively thin-walled inner container opening only to an aperture in the front closure. A small closure plugs the aperture. A reaction frame secures the various closures. Blanket gases are introduced into the furnace chamber and process gases into the process chamber defined by the interior of the inner container. Means are provided for minimizing the pressure difference across the inner container to enable it to maintain its original shape.

Dual chambered high pressure furnace

An enhancement type, self-aligned silicon gate complementary metal oxide semiconductor (CMOS)/silicon on sapphire (SOS) structure is made by generating all gate oxides and oxide isolated regions with dry oxygen at pressures above 1 atmosphere and at temperatures of 800.degree. C. to 825.degree. C. using ion implantation for all doping operations and plasma definition of all masking dielectrics.

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Eatontown, NJ, United States of America

Robert J Zeto