Bridgestone Firestone North American Tire, LLC

North Carolina State University

Bridgestone Americas Tire Operations, LLC

Bridgestone/firestone Research, Inc.

Bridgestone/firestone, Inc.

Robert J Trew

Russell W Koch

Paul B Wilson

John D Rensel

Umesh Kumar Mishra

John L Turner

The invention provides a monitoring device and tire combination wherein an antenna is mounted to the tire in a location spaced from the monitoring device. In one embodiment, the antenna may be mounted to the tire sidewall outside the body cords of the tire. The antenna may be mounted on the outer surface of the sidewall or embedded within the body of the sidewall. The antenna is connected to the monitoring device with a connector. The connector may be electrically coupled to the monitoring device or may be connected to the monitoring device with a plug and socket connection. When the antenna is outside the body cord, the connector may extend from the antenna through the bead filler, over the top of the turn up, or under the bead ring.

Method for mounting electronic device and antenna in tire

Tire with monitoring device

Monitoring device and tire combination

A monitoring device and patch combination used to monitor the conditions of a pneumatic tire having an innerliner includes a monitoring device and patch. The monitoring device includes a first connection element that is connected to the monitoring device. The patch includes an antenna that is connected to a second connection element. In one embodiment of the invention, the first connection element is in the form of a socket while the second connection element is in the form of a plug. The connection elements allow the monitoring device and patch to be separately fabricated and the direct physical connection between the antenna and the monitoring device to be formed when the combination is connected to the innerliner of the tire. In another embodiment, a plug extends from the bottom of an encapsulated monitoring device and is aligned with a socket on the patch. The connection between the plug and the socket occurs automatically when the encapsulated monitoring device is aligned with and connected to the patch.

Patch and tire monitoring device

Combination monitoring device and patch for a pneumatic tire and method of installing the same

A tire tag protector is used to cover a tire tag on the inside of a pneumatic tire during a high-voltage, non-destructive test procedure. The tire tag protector includes a layer of dielectric and is configured to fit completely over the tire tag inside a pneumatic tire, the tire tag protector may also include a layer of conductive material. The tire tag protector is temporarily attached to the tire by an adhesive or by prongs that engage the tire tag. The tire tag protector prevents the high-voltage electrode used in the test procedure from snagging on the tire tag and prevents the sensitive electronic equipment of the tire tag from being damaged by the high-voltage test environment.

Method of using tire tag protector

A monitoring device and patch combination used to monitor the conditions of a pneumatic tire having an innerliner includes a monitoring device and a patch. The monitoring device includes at least one sensing element that is adapted to sense a condition of the pneumatic tire. The monitoring device also includes a first electrical pad connected to the sensing element. The monitoring device and first electrical pad are preferably encapsulated in an encapsulation material. The patch is adapted to carry the monitoring device and mount the monitoring device on the innerliner of the tire. An antenna is embedded within the patch and a second electrical pad is connected to the antenna. The monitoring device is disposed on the patch in a manner such that the first and second electrical pads are aligned to provide electrical coupling between the pads. The antenna is in communication with the sensing element through the electrical coupling between the pads. The monitoring device and patch may be manufactured in separate facilities and then brought together when they are connected to the innerliner of the tire without the requirement of a physical connection between the sensing element and the antenna.

Combination monitoring device and patch for a pneumatic tire and method of installing the same with a coupled antenna

A method for monitoring various engineering conditions of a pneumatic tire such a temperature, pressure, tire rotation and other operating conditions of the tire. A tire tag is mounted on the interior of the tire within the pressurizable cavity and contains the stored data and sensors for detecting certain conditions within the cavity. A separate transponding device is mounted on the tire rim. The tire tag contains a battery, an antenna and stored data pertaining to the tire. The transponding device uses electronic circuitry which collects data from the tire tag. The tire tag is actuated by transmitted radio frequency waves from the transponding device, which data is retransmitted by the transponding device to the remote location by an antenna which extends from the transponding device through the rim to a location externally of the tire.

Method and apparatus for transmitting stored data and engineering

The gate voltage breakdown of an integrated circuit field effect transistor, expecially a compound semiconductor metal semiconductor field effect transistor (MESFET) and high electron mobility transistor (HEMT) is dramatically increased by forming an electron trap layer on the surface of the device, under the gate contact and extending beyond the gate contact towards the drain contact. The electron trap layer is preferably a high resistivity lattice matched monocrystalline layer having at least 10.sup.18 traps per cubic centimeter. For gallium arsenide based transistors, the electron trap layer is preferably formed by low temperature molecular beam epitaxy (MBE) of gallium and arsenic fluxes, to produce a monocrystalline gallium arsenide layer having 1% excess arsenic. For indium phosphide based transistors, the electron trap layer is preferably formed by low temperature MBE of aluminum, indium and arsenic fluxes to produce a monocrystalline aluminum indium arsenide layer having 1% excess arsenic.

Method of making high current, high voltage breakdown field effect

The gate voltage breakdown of an integrated circuit field effect transistor, especially a compound semiconductor metal semiconductor field effect transistor (MESFET) and high electron mobility transistor (HEMT) is dramatically increased by forming an electron trap layer on the surface of the device, under the gate contact and extending beyond the gate contact towards the drain contact. The electron trap layer is preferably a high resisitivity lattice matched monocrystalline layer having at least 10.sup.18 traps per cubic centimeter. For gallium arsenide based transistors, the electron trap layer is preferably formed by low temperature molecular beam epitaxy (MBE) of gallium and arsenic fluxes, to produce a monocrystalline gallium arsenide layer having 1% excess arsenic. For indium phosphide based transistors, the electron trap layer is preferably formed by low temperature MBE of aluminum, indium and arsenic fluxes to produce a monocrystalline aluminum indium arsenide layer having 1% excess arsenic.

Growing community of inventors

Cary, NC, United States of America

Robert J Trew