Dell Products Inc.

Other

Robert J Proulx

Samuel Hudson

Michael Rijo

Frederick K H Lee

Leland W Thompson

Zhenwei Wang

Yuanzheng Cai

Erhan Aslan

Girish B Desai

Matthew Borsini

Jie Wu

A modular test system includes a modular controller subsystem coupled to a modular tested subsystem by a modular intermediary subsystem. The modular intermediary subsystem transmits communications between the modular controller subsystem and the modular tested subsystem during testing operations performed by the modular controller subsystem, and performs at least one testing function that is not available in the modular controller subsystem during the testing operations performed by the modular controller subsystem.

Modular test system

A data retention event preparation/recovery system includes a chassis, a plurality of NAND subsystems included in the chassis, and a data retention event preparation/recovery subsystem that is included in the chassis and coupled to the plurality of NAND subsystems. The data retention event preparation/recovery subsystem determines that the plurality of NAND subsystems will experience a data retention event and, in response, identifies a first subset of the plurality of NAND subsystems that exceed an error threshold, identifies at least one overprovisioned block in the plurality of NAND subsystem, copies data that is stored on the first subset of the plurality of NAND subsystems to the at least one overprovisioned block in the plurality of NAND subsystems, and power offs the plurality of NAND subsystems to begin the data retention event.

Data retention event preparation/recovery system

A multi-zone temperature testing system includes a test device having components, a multi-zone temperature testing device that is coupled to the test device and that includes a first thermoelectric module that is located adjacent a first subset of the components and a second thermoelectric module that is located adjacent a second subset of the components, and a temperature control subsystem that is coupled to the multi-zone temperature testing device. The temperature control subsystem controls the first thermoelectric module in the multi-zone temperature testing device to produce a first heat flux that provides a testing temperature for the first subset of the components, and controls the second thermoelectric module in the multi-zone temperature testing device to produce a second heat flux that is different than the first heat flux and that provides the testing temperature for the second subset of the components.

Multi-zone temperature testing system

A storage device syndrome-weight-based error correction system includes a syndrome-weight-based error correction subsystem that is coupled to a storage subsystem in a chassis. The syndrome-weight-based error correction subsystem performs a first error correction hard decoding operation on the storage subsystem that utilizes first read voltage thresholds and that generates a first final codeword candidate having a first syndrome weight. The syndrome-weight-based error correction subsystem then performs error correction hard decoding read voltage threshold real-time search operations to determine second read voltage thresholds, and performs a second error correction hard decoding operation on the storage subsystem that utilizes the second read voltage thresholds and that generates a second final codeword candidate having a second syndrome weight. If the syndrome-weight-based error correction subsystem determines that the first syndrome weight is less than the second syndrome weight, it performs error correction soft decoding operations using the first read voltage thresholds.

Storage device syndrome-weight-based error correction system

A storage device syndrome-weight-based error correction system includes a syndrome-weight-based error correction subsystem coupled to a storage subsystem in a chassis. The syndrome-weight-based error correction subsystem performs a plurality of respective first error correction hard decoding operations on the storage subsystem that each utilize respective read voltage thresholds and that each generate a respective final codeword candidate having a respective syndrome weight. The syndrome-weight-based error correction subsystem identifies a first syndrome weight of a first final codeword candidate that was generated via the performance of one of the plurality of respective first error correction hard decoding operations that utilized first read voltage thresholds and that is lower than the syndrome weights of the final codeword candidates generated via the performance of the others of the plurality of respective first error correction hard decoding operations, and performs error correction soft decoding operations using the first read voltage thresholds.

A pseudo Single Level Cell (pSLC)-scan-based storage device initialization system includes a chassis, a storage subsystem that is housed in the chassis, and a pSLC-scan-based storage device initialization subsystem that is housed in the chassis and coupled to the storage subsystem. The pSLC-scan-based storage device initialization subsystem reads respective subsets of pSLC data from the storage subsystem over a plurality of different read voltage thresholds, and identifies a first read voltage threshold that is included in the plurality of different read voltage thresholds and at which a respective first subset of the pSLC data read from the storage subsystem experienced errors within a predetermined error range. The pSLC-scan-based storage device initialization subsystem then uses the first read voltage threshold to estimate a powered-off data retention time for the storage subsystem, and performs post-data-retention initialization operations based on the powered-off data retention time for the storage subsystem.

PSLC-scan-based storage device initialization system

A temperature-accelerated solid-state storage testing method includes writing data to a storage system and subjecting the storage system to a first temperature range for a first time period that is equivalent to operation at a lower/second temperature for a greater/second time period. Subsequently, the data from the storage system is read within a third time period at a third temperature range to generate first test data. The storage system is then subjected to the first temperature range for a fourth time period that was reduced relative to the first time period based on the reading of the data to generate the first test data causing the operation of storage system to be equivalent to operating at the second temperature range for a fifth time period. Subsequently the data from the storage system is read within the third time period at the third temperature range to generate second test data.

Temperature-accelerated solid-state storage testing methods

A storage subsystem read voltage determination system coupled to a first storage subsystem may read data from the first storage subsystem at a plurality of different read voltage sets and, for each of the plurality of read voltage sets, generate a respective bit error probability distribution of a number of bit errors per codeword provided by the data read from the first storage subsystem. The storage subsystem read voltage provisioning system also generates an error correction capability graph associated with error correction code used by the first storage subsystem and, based on the bit error probability distributions and the error correction capability graph, generates a respective average codeword error rate for each of the plurality of read voltage sets. The storage subsystem read voltage provisioning system then identifies a first read voltage set for which a minimum average codeword error rate was determined.

Storage subsystem read voltage determination system

A storage device reclassification system includes a storage device reclassification subsystem coupled to a storage device that has a NAND storage subsystem and that is configured to perform first storage operations associated with a first storage device classification. The storage device reclassification subsystem performs testing operations on the NAND storage subsystem and, based on the testing operations, identifies at least one reduced capability of the NAND storage subsystem. Based on the at least one reduced capability of the NAND storage subsystem, the storage device reclassification subsystem determines at least one storage device operation modification and performs the at least one storage device operation modification on the storage device in order to configure the storage device to perform second storage operations that are different than the first storage operations and that are associated with a second storage device classification that is different than the first storage device classification.

Storage device reclassification system

In general, embodiments of the invention relate tracking the operating temperature of the solid-state memory modules (SSMMs) in order to improve their performance.

Temperature-adjusted power-on data retention time tracking for solid state drives

A golf caddie device is disclosed that is designed for carrying golf equipment. The golf caddie device comprises a support rod having a spike and an ergonomically shaped handle. The golf caddie device also comprises a ball holder, a first cylinder comprising up to five openings for retaining golf clubs, and a second cylinder comprising up to five openings for retaining golf club shafts. Golf clubs are inserted into the golf caddie device by inserting the shaft part of the golf club through one of the first cylinder openings and into one of the openings of the second cylinder, thus, retaining the golf clubs within the golf caddie device.

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Round Rock, TX, United States of America

Robert J Proulx