Allied Corporation

Candescent Technologies Corporation

Other

Gte Sylvania Incorporated

Canon Kabushiki Kaisha

Robert J Pressley

Theodore S Fahlen

Paul N Ludwig

Anthony P Schmid

Alfred S Conte

Steven T Cho

Floyd R Pothoven

Anthony John Cooper

A pair of plate structures ( and ), such as a baseplate structure and a faceplate structure of a flat-panel display, are sealed to each other by first attaching the plate structures to each other, typically at multiple attachment locations, in a non-vacuum environment. The plate structures are then hermetically sealed to each other, typically through an outer wall ( ) or/and typically by gap jumping, in a vacuum environment.

Sealing of plate structures

Portions (40 and 44) of a structure, such as a flat-panel device, are sealed together by a gap-jumping technique in which a sealing area (40S) of one portion is positioned near a matching sealing area (44S) of another portion such that a gap (48) at least partially separates the two sealing areas. The gap typically has an average height of 25 .mu.m or more. With the two portions of the structure so positioned, energy is initially transferred locally to material of a specified one of the portions along part of the gap while the two portions are in a non-vacuum environment to cause material of the two portions to bridge that part of the gap and partially seal the two portions together along the sealing areas. Energy is subsequently transferred locally to material of the specified portion of the structure along the remainder (48A) of the gap while the two portions are in a vacuum environment to cause material of the two portions to bridge the remainder of the gap and complete sealing of the two portions together along the gap. A laser (56) is typically employed in performing at least one of the gap-jumping steps.

Gap jumping to seal structure, typically using combination of vacuum and

A structure, such as a flat-panel device, is sealed together by a gap-jumping technique in which an edge (44S) of a wall (44) is positioned near a matching sealing area (40S) of a plate structure (40) such that a gap (48) at least partially separates the edge of the wall from the sealing area of the plate structure. The gap usually has an average height of 25 .mu.m or more. Energy is then transferred locally to material of the wall along the gap to cause material of the wall and the plate structure to bridge the gap and seal the plate structure to the wall. The energy-transferring step is typically performed with light energy provided by a laser (56). Local energy transfer can also be utilized to tack the plate structure to the wall at multiple spaced-apart locations (44A) along the wall. The tacking operation is typically performed as a preliminary step to sealing the plate structure to the wall.

Gap jumping to seal structure including tacking of structure

An optical beam concentrator divides and redirects an incident beam to provide uniform irradiation along the length of a narrow rectangular area. The beam concentrator may form a part of an apparatus for laser irradiation of materials. The apparatus comprises a laser, a beam concentrator, and a support for the material being irradiated. Depending on the system parameters, the apparatus is particularly useful for gettering defects in semiconductor device fabrication or other materials processing applications.

Optical beam concentrator

An optical beam homogenizer divides and redirects an incident beam to provide uniform irradiation to a plane surface. The beam homogenizer is particularly useful in an apparatus and method for uniform laser irradiation of materials. The apparatus comprises a laser, a beam homogenizer, and a support for the material being irradiated. Depending on the system parameters, the apparatus is useful for metal hardening, semiconductor annealing, or other materials processing applications.

Optical beam homogenizer

A process for gettering defects in a semiconductor is provided. The process comprises using a laser beam to drive a dopant material into a melted non-active surface of a semiconductor device, followed by heating the semiconductor to drive defects to traps formed by the dopant. The process creates in the bulk of the semiconductor strain fields that not only trap defects, which would otherwise degrade device performance, but also hold the defects during subsequent processing steps.

Laser process for gettering defects in semiconductor devices

An apparatus for initiating electrical discharge in a gas transport laser having two or more sets of electrodes comprises a pulse generator connected to both sets of electrodes. The pulse generator comprises an alternating current (AC) source connected to the primary windings of two transformers having secondaries connected to the sets, respectively of electrodes. By energizing the transformers after the application of a direct current (DC) voltage across the electrodes of each set, a discharge across the sets of electrodes occurs simultaneously for a balanced starting of the lasing action. The invention also comprehends the method of starting a laser having a plurality of sets of electrodes consisting of the steps of applying a DC potential across each set of electrodes and transmitting at least one voltage pulse simultaneously to one of the electrodes of each set to produce simultaneously an electrical discharge between all sets of electrodes.

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Cupertino, CA, United States of America

Robert J Pressley