Lam Research Corporation

Other

Lam Researh Corporation

Robert J O'Donnell

John Edward Daugherty

Christopher C Chang

Mike Ravkin

Gregory James Goldspring

John Martin De Larios

Eric H Lenz

Mark Henry Wilcoxson

Alexander A Yatskar

Arnold Kholodenko

Thomas W Anderson

Cheng-Yu (Sean) Lin

Michael Ravkin

Michael G R Smith

Bridget Hill

Evelio Sevillano

Peter R Wassei

Thomas Chang

Ronda Ropes

Methods and systems for tracking an edge ring includes capturing an edge ring identifier from a source related to the edge ring. The edge ring is inserted into a slot of an edge ring carrier, wherein the edge ring is being assigned to the edge ring carrier. The edge ring identifier is tracked to determine transfers into and out of the edge ring carrier and into and out of a processing station. The tracking of the edge ring identifier builds a metadata file that provides lifetime information regarding the edge ring.

Using identifiers to map edge ring part numbers onto slot numbers

Components of semiconductor processing apparatus axe formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.

Low contamination components for semiconductor processing apparatus and methods for making components

Apparatus and methods are provided for efficiently reclaiming solvents used to clean surfaces of semiconductor wafers, etc. More particularly, embodiments of the present invention provide an in-situ reclaim approach that utilizes condensing mechanisms to reclaim evaporated solvent components. In these embodiments, the condensing can occur within a proximity head itself and/or along a vacuum line running from the proximity head to a vacuum tank. Other embodiments of the present invention provide an in-situ reclaim approach that prevents the evaporation of solvents at the onset by maintaining appropriate equilibrium gas phase concentrations between the liquid chemistries and gases used to process wafer surfaces.

In-situ reclaim of volatile components

A substrate is moved in a linear direction simultaneously between a processing face of an upper proximity head and a processing face of a lower proximity head. As the substrate is moved, a first meniscus of processing liquid is generated between the processing face of the upper proximity head and a top surface of the substrate, and a second meniscus of processing liquid is generated between the processing face of the lower proximity head and a bottom surface of the substrate. The first meniscus has a meniscus protrusion extending in the linear direction in which the substrate is moved and positioned on a trailing side of the first meniscus relative to the linear direction in which the substrate is moved. The meniscus protrusion is centered on the substrate relative to a diameter of the substrate as measured perpendicular to the linear direction in which the substrate is moved.

Reduction of entrance and exit marks left by a substrate-processing meniscus

A carrier for supporting a substrate during processing by a meniscus fowled by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus

A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non-anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.

Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof

Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings ca protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.

A substrate is placed on a plurality of support pins within an opening of a carrier, such that a gap exists between the radial perimeter of the substrate and the carrier. The substrate and carrier are passed in a linear direction through a meniscus generated between respective faces of upper and lower proximity heads. Each of the upper and lower proximity heads includes a plurality of meniscus nozzles configured to supply liquid to the meniscus. A plurality of vacuum ports are formed on the respective face of each of the upper and lower proximity heads and are arranged to completely surround the plurality of meniscus nozzles. Liquid of the meniscus is evacuated from the gap between the radial perimeter of the substrate and the carrier so as to reduce a size and a frequency of at least one of entrance or exit marks on the substrate.

A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete holes connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.

System, method and apparatus for maintaining separation of liquids in a controlled meniscus

Methods, apparatus, and systems are provided for efficiently reclaiming solvents used to clean surfaces of semiconductor wafers, etc. More particularly, embodiments of the present invention provide an in-situ reclaim approach that utilizes condensing mechanisms to reclaim evaporated solvent components. In these embodiments, the condensing can occur within a proximity head itself and/or along a vacuum line running from the proximity head to a vacuum tank. Other embodiments of the present invention provide an in-situ reclaim approach that prevents the evaporation of solvents at the onset by maintaining appropriate equilibrium gas phase concentrations between the liquid chemistries and gases used to process wafer surfaces.

A system and method of forming and using a proximity head. The proximity head includes a head surface including a first zone, a second zone and an inner return zone. The first zone including a first flat surface region and multiple first discrete holes connected to a corresponding first conduit and arranged in a first row. The second zone including a second flat region and multiple second discrete holes connected to a corresponding second conduit. The inner return zone being disposed between and adjacent to the first zone and the second zone and including multiple inner return discrete hole connected to a corresponding inner return conduit and arranged in an inner return row. The first row and the inner return row are parallel. A portion of an edge of each of the inner return discrete holes is recessed into the head surface.

A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

A proximity head for generating and maintaining a meniscus for processing a substrate is described. The proximity head includes a plurality of meniscus nozzles formed on a face of the proximity head, the nozzles being configured to supply liquid to the meniscus, a plurality of vacuum ports formed on the face of the proximity head, the vacuum ports being arranged to completely surround the plurality of meniscus nozzles, and a plurality of gas nozzles formed on the face of the proximity head, the gas nozzles at least partially surrounding the vacuum ports. The proximity head further includes means for reducing a size and frequency of entrance and/or exit marks at a leading edge and a trailing edge on the substrate by aiding and encouraging liquid from the meniscus to evacuate a gap between the substrate and the carrier.

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Alameda, CA, United States of America

Robert J O'Donnell