Applied Materials, Inc.

Robert J Mitchell

Stephen Moffatt

Geoffrey Ryding

Amir Hamed Al-Bayati

Theodore H Smick

Marvin Farley

Hiroyuki Ito

Martin A Hilkene

Xue-Yu Qian

Ronald Horner

John Gordon

Scott E Peitzsch

Keith D Relleen

Simon Herbert Povall

Gregory Robert Alcott

Matthew D Castle

James Victor Edwards

James Biddle

Ian R Joyce

Leslie Lane

Lee Spraggon

A system and method for controlling electrostatic clamping of multiple platens on a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on a spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The central hub provides the electrostatic clamping voltages to each of the plurality of platens. Further, the plurality of platens may also be capable of rotation about an axis orthogonal to the rotation axis of the central hub. The central hub controls the rotation of each of the platens. Power connections and communications are provided to the central hub via the spindle assembly.

System and method for controlling electrostatic clamping of multiple platens on a spinning disk

A guide tube for an ion beam in an ion implanter which is located adjacent a semiconductor wafer being implanted has an outwardly tapering central bore, thereby alleviating problems of beam strike as the ion beam passes through the guide tube.

Ion beam guide tube

An ion implanter incorporates an r.f. accelerator assembly to provide ions for implant at high energies. The accelerator assembly includes electrodes mounted in the vacuum chamber so as to be movable between an operational position for generating and accelerating electric field and a non operational position within the vacuum chamber displaced clear of the beam path. An Actuator moves the electrode between the operational and non operation positions. For energy implanting, the electrodes are in the operational position and for low energy implants the actuator moves the electrodes to the non operational position clear of the beam path.

Ion implanter and a method of implanting ions

Ion implantation beam monitor

The correct handover position between the gripper and the e-chuck is located using a light source and a 2-D photosensor. As the e-chuck is in the loading position it can be driven forwards or backwards in the beam direction by rotating the main whisper scan rotor. The line drawn across the 2-D array by a spot of light from the light source passing through a hole in a flag attached to the e-chuck is recorded. Similarly, the line drawn by a spot of light from the same source passing through a hole in the flag attached to the gripper is also recorded. The point of intersection is the ideal transfer point. For transfer the e-chuck is then driven to this point which can be checked from the 2-D sensor. The gripper is then also driven to the same point and alignment can be checked using the light source and sensor. The hole in the gripper flag may be somewhat smaller than the hole in the e-chuck flag so that proper alignment is assured when the illuminated spot on the 2-D sensor is at the target position for the e-check but has the dimension or total brightness corresponding to the smaller hole of the gripper.

Method and apparatus for detecting that two moveable members are correctly positioned relatively to one another

An Electron flood apparatus for neutralizing positive charge build-up on substrate during implantation of ions in a substrate by ion beam implantation apparatus. The electron flood apparatus comprises a tube for axially receiving and passing an ion beam to a substrate, an opening in a sidewall of the tube, a plasma chamber having an exit aperture in communication with said opening of said tube, a supply of inert gas to said plasma chamber, a high frequency power generator, and means to deliver high frequency power from said generator to maintain a plasma in said chamber to produce low energy electrons, whereby a flux of said low energy electrons emerges from said chamber through said exit aperture into said tube to merge with the ion beam.

Electron flood apparatus for neutralizing charge build-up on a substrate

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Pulborough, United Kingdom

Robert J Mitchell