Lawrence Livermore National Security, LLC

University of California

Terawave Communications, Inc.

Robert J Deri

Andrew James Bayramian

Susant K Patra

Jack Kotovsky

John Caird

Mary Louis Spaeth

Kenneth Rene Manes

Christopher M Spadaccini

John W Elmer

Alvin Charles Erlandson

Frank Godwin Patterson

Michael D Pocha

Al Erlandson

Jing Jiang

Sol P Dijaili

Edward Ira Moses

Ronald E Haigh

Oliver T Strand

Paul O Leisher

Henry E Garrett

Anthony J DeGroot

Abraham Phillip Lee

Joseph Collin Farmer

Edward Wayne Boyd

Raymond John Beach

Jeffrey D Walker

Alexander M Rubenchik

Todd M Bandhauer

Robin R Miles

Bassem S El-Dasher

Jeffery F Latkowski

Christopher Allen Ebbers

Diana Ching Chen

Barry L Freitas

Steven W Bond

Richard H Sawicki

Charles F McConaghy

Ross G Werner

Mark Rhodes

Steven James Telford

Andy Bayramian

Jamie Riotto

Rodney Kay Lanning

Mark A Henesian

Edward Steven Fulkerson, Jr

Xiaojun Fang

Sarath K Menon

Barry A Perkins

Holly E Petersen

William D Goward

Peter A Amendt

Thomas M Anklam

Terry McNelley

Lawrence J Pelz

Glenn Beer

Wai Y Kan

Charles L Heinbockel

Anthony Michael Dunne

Edward S Koh

Michael C Larson

Rajesh R Patel

Eugene D Brooks, Iii

Cory V Bennett

John Allyn Caird

John A Caird

Mark A Rhodes

Christopher A Ebbers

The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.

Engineered current-density profile diode laser

A pyrolytic graphite (PG) substrate and laser diode package includes a substrate body having a PG crystalline structure with a basal plane oriented at a pre-determined orientation angle as measured from a longitudinal axis of a heat generating material, such as a laser diode, mounted on a surface of the PG substrate, so that a coefficient of thermal expansion (CTE) of the PG substrate is substantially matched with a CTE of the material.

CTE-tuned pyrolytic graphite (PG) substrate to minimize joining stress between laser diode and the substrate

A Cu&#x2014;Si&#x2014;Cu substrate having a silicon substrate, copper plating on opposite sides of the silicon substrate, and copper vias extending thru the silicon substrate to electrically and thermally connect the copper platings together. The thicknesses of the silicon substrate and the copper platings are selected so that a coefficient of thermal expansion (CTE) of the Cu&#x2014;Si&#x2014;Cu substrate is substantially the same as a CTE of a material to be mounted on the Cu&#x2014;Si&#x2014;Cu substrate.

Si-based CTE-matched substrate for laser diode packaging

An architecture for an inertial confinement fusion system is disclosed. The system includes a fusion chamber for producing neutrons from a fusion reaction, and a laser system in which lasers are arranged about a vacuum chamber to provide energy to the fusion chamber to initiate the fusion reaction. The beam paths between the lasers and the fusion chamber are configured to prevent neutrons from the fusion chamber from reaching the laser system at a level that would preclude human access to the laser system.

Inertial confinement fusion system which decouples life-limited component from plant availability

A laser amplifier module having an enclosure includes an input window, a mirror optically coupled to the input window and disposed in a first plane, and a first amplifier head disposed along an optical amplification path adjacent a first end of the enclosure. The laser amplifier module also includes a second amplifier head disposed along the optical amplification path adjacent a second end of the enclosure and a cavity mirror disposed along the optical amplification path.

Method and system for compact efficient laser architecture

An apparatus for use in a friction stir operation, such as friction stir welding (FSW) or friction stir processing (FSP). The apparatus may have a rotating tool adapted to be plunged into a material, where the material is susceptible to being softened by heating. The rotating tool may further be adapted to be advanced along a surface of the material. An optical energy generating subsystem may be used to heat a portion of the material using optical energy as the tool is advanced along the material.

System and method for light assisted friction stir processing and welding of metallic and non-metallic materials

Apparatuses, methods, and systems are disclosed to drive pumping laser diode arrays. In implementations, an integrated system can be constructed to in a compact, efficient and cost-effective manner and to meet the needs of driving laser diode arrays in various diode pumped solid state laser applications. The disclosed implementations include individual laser diode drivers or pulsers, methods of communicating with laser diode drivers, and methods of controlling the pulse shape of each laser diode driver.

Driver circuitry and systems for high current laser diode arrays

A laser diode package includes a heat pipe having a fluid chamber enclosed in part by a heat exchange wall for containing a fluid. Wicking channels in the fluid chamber is adapted to wick a liquid phase of the fluid from a condensing section of the heat pipe to an evaporating section of the heat exchanger, and a laser diode is connected to the heat exchange wall at the evaporating section of the heat exchanger so that heat produced by the laser diode is removed isothermally from the evaporating section to the condensing section by a liquid-to-vapor phase change of the fluid.

High flux diode packaging using passive microscale liquid-vapor phase change

An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

Transverse pumped laser amplifier architecture

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Enhanced vbasis laser diode package

An electro-optic device includes an electro-optic crystal having a predetermined thickness, a first face and a second face. The electro-optic device also includes a first electrode substrate disposed opposing the first face. The first electrode substrate includes a first substrate material having a first thickness and a first electrode coating coupled to the first substrate material. The electro-optic device further includes a second electrode substrate disposed opposing the second face. The second electrode substrate includes a second substrate material having a second thickness and a second electrode coating coupled to the second substrate material. The electro-optic device additionally includes a voltage source electrically coupled to the first electrode coating and the second electrode coating.

Electro-optic device with gap-coupled electrode

Growing community of inventors

Pleasanton, CA, United States of America

Robert J Deri