Delphi Technologies, Inc.

Delco Electronics Corporation

Robert J Campbell

Erich William Gerbsch

Monty B Hayes

Charles T Eytcheson

Richard J Voss

Robert D Maple

John Robert Shreve

Todd G Nakanishi

Roger A Mock

Lisa A Viduya

Paul E Buck

Eric Von Kierstead

Debra E Poppas

Erich W Gerbsch

A semiconductor power module includes a semiconductor chip thermally interfaced to a ceramic substrate and a leadframe defined by a flexible circuit disposed intermediate the chip and the ceramic substrate. The flexible circuit includes a conductor layer that is selectively encased in an insulated jacket to ensure adequate electrical insulation between the conductor layer and adjacent conductive surfaces. Preferably, the module is constructed for double side cooling by sandwiching the chip between a pair of ceramic substrates and providing intermediate flexible circuit leadframes on both sides of the chip for electrically accessing the chip terminals.

Semiconductor power module with flexible circuit leadframe

A vertical laminated electrical switch circuit includes a first, second, and third ceramic substrate positioned in juxtaposed relationship relative to each other. The circuit also includes a first and second electrical device electrically coupled to each other. The first electrical device is coupled to the first and second substrates and positioned there between. The second electrical device is coupled to the second and third ceramic substrates and positioned there between. In some embodiments, multiple electrical devices may be coupled to a single substrate.

Vertical laminated electrical switch circuit

A parallel dual switch module that is characterized by improved mechanical and electrical packaging efficiency and low cost. The module includes a common terminal defined by a first stamped elongate metal plate insert molded into the module housing, and positive and negative terminals defined by second and third stamped elongate metal plates disposed side-by-side atop the common terminal. Connection areas formed on the positive and negative terminals extend in opposite lateral directions, and interdigitate with connection areas formed on the common terminal, thereby forming two linear parallel rows of connection areas. Adjacent each row of connection areas, and mounted on a baseplate of the module is a set of parallel connected transistors subassemblies. A molded elongate gate collection component is mounted on the baseplate between the sets of transistor subassemblies, and beneath the common terminal. The gate collection component confines a pair of insert molded gate terminal strips to which the gate terminals of the respective sets of transistor subassemblies are connected, and the terminal strips, in turn, are coupled to gate terminals of the module. The transistor subassemblies are mounted in close proximity to the central terminal structure, and the metal tabs of the subassemblies are shaped to prevent interference with the overlying terminal connection areas, and to provide stress relief.

Parallel dual switch module

A reference voltage developing circuit that develops a multiple slope reference voltage that is a function of temperature. The circuit has a plurality of base-emitter multipliers each of which includes a transistor and each of which develops an output voltage that is a function of the base-emitter voltage of the transistor of the multiplier. Since the base-emitter voltage varies with changes in temperature, each multiplier circuit develops a voltage that varies with changes in temperature. The multiplier circuits have different multiplier magnitudes to thereby provide temperature dependent output voltages that have different slopes. A voltage selector circuit is connected to the multiplier circuits and it provides an output voltage that corresponds to the higher of the output voltages developed by the multiplier circuits.

Temperature compensated voltage reference circuit

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Noblesville, IN, United States of America

Robert J Campbell