Texas Instruments Corporation

Robert Hung Nguyen

Bill Alan Wofford

Philipp Steinmann

Eric W Beach

Siang Ping Kwok

Pushpa Mahalingam

MrPushpa Mahalingam

A thin film resistor structure () is formed on a dielectric layer (). A capping layer () is formed above said thin film resistor structure () and vias () are formed in the capping layer () using a two step etching process comprising of a dry etch process and a wet etch process. Conductive layers () are formed in the vias and form electrical contacts to the thin film resistor structure ().

Method of forming an integrated circuit thin film resistor

A polysilicon layer ( ) is formed on a dielectric region ( ). An optional metal silicide layer ( ) can be formed on the polysilicon layer. A dielectric layer ( ) is formed over the metal silicide layer and a conductive layer ( ) formed over the dielectric layer. The formed layers are etched by a combination of multi-step dry and wet process to form high precision integrated circuit capacitors.

High precision integrated circuit capacitors

Growing community of inventors

Richardson, TX, United States of America

Robert Hung Nguyen