Fujimi Incorporated

Other

Novellus Systems Incorporated

Robert Hepburn

Yongsik Yu

William Crew

Shogo Tsubota

Michael Carris

Karen Billington

Provided is a method for producing a porous metal oxide. The method includes: preparing a slurry by mixing a metal source, a pore forming agent and an aqueous solvent; drying the slurry to obtain a metal oxide precursor; and sintering the metal oxide precursor to generate a porous metal oxide. The metal source is an organometallic compound or hydrolyzate thereof containing a metal that makes up the porous metal oxide; the pore forming agent is an inorganic compound that generates a gas by decomposing at a temperature equal to or lower than a temperature at which the metal oxide precursor is sintered; and the slurry is prepared using 50 parts by weight or more of the pore forming agent with respect to 100 parts by weight of the metal source.

Method for producing porous metal oxide

The present invention provides a low dielectric constant copper diffusion barrier film suitable for use in a semiconductor device and methods for fabricating such a film. Some embodiments of the film are formed of a silicon-based material doped with boron. Other embodiments are formed, at least in part, of boron nitride. Some such embodiments include a moisture barrier film that includes oxygen and/or carbon. Preferred embodiments of the copper diffusion barrier maintain a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

Film for copper diffusion barrier

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Tualatin, OR, United States of America

Robert Hepburn